Annular Silicon-Embedded Thermoelectric Cooling for On-Die Hotspot Management
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Solution Overview
Problem
High-power microelectronics packaging faces challenges in thermal management due to the formation of hotspots within IC dies, where conventional thermal solutions are inadequate as power densities exceed the heat transfer capabilities of conventional materials, leading to potential damage or malfunction of active components.
Innovation Solution
The integration of an annular thermoelectric cooler (TEC) within the semiconductor die, featuring thermoelectric strips following a round or polygonal path surrounding an interior region with higher thermal conductivity, providing both passive and active heat transfer mechanisms to manage hotspot temperatures effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional thermal solutions (heat sinks and thermal contact materials) are used, then heat dissipation is provided, but the solutions reach upper performance limits as power densities increase beyond heat transfer capabilities
Solution Approach 1:
The patent embeds thermoelectric cooler elements directly within the semiconductor die structure, nesting the thermal management solution inside the device itself rather than using external heat sinks. This integrated approach allows the TEC to be positioned precisely at hotspot locations and provides more effective heat removal at the source before heat can spread to surrounding areas.
Solution Approach 2:
The patent introduces thermoelectric material as an intermediary substance between the heat-generating semiconductor region and the heat dissipation path. This thermoelectric intermediary actively pumps heat away from hotspots using the Peltier effect, providing a more effective heat transfer mechanism than conventional passive thermal contact materials.
2Power
If high-power devices are packaged with compact trace routing, then power delivery is improved, but space for heat dissipation is reduced and hotspots form
Solution Approach 1:
The thermoelectric cooler elements are nested within the semiconductor die structure, allowing simultaneous high-power operation and effective thermal management in a compact package. The TEC elements are positioned between the heat-generating regions and the heat dissipation path, enabling high power delivery through compact routing while actively removing heat at the source.
3Productivity
If feature sizes are reduced and feature densities are increased, then device performance is improved, but thermal management becomes increasingly difficult
Solution Approach 1:
The patent implements localized thermal management by positioning thermoelectric cooler elements specifically at hotspot locations within the semiconductor die. Rather than attempting to cool the entire die uniformly, the TEC elements are strategically placed in high-power-density regions where hotspots form, providing targeted heat removal that maintains device performance while managing thermal challenges of high feature density.
Solution Approach 2:
The thermoelectric management structure is nested within the high-density feature architecture, allowing the thermal management solution to scale with the device. The TEC elements are integrated into the die structure itself, enabling effective heat dissipation even as feature sizes are reduced and densities are increased.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The annular TEC device enhances heat transfer from hotspots, offering superior cooling performance and operational efficiency by creating a temperature gradient for active heat pumping, thereby protecting the IC components and extending its lifespan.
Implementation Method 1
The annular TEC device enhances heat transfer from hotspots, offering superior cooling performance and operational efficiency by creating a temperature gradient for active heat pumping
Implementation Method 2
featuring thermoelectric strips following a round or polygonal path surrounding an interior region with higher thermal conductivity, providing both passive and active heat transfer mechanisms
Data Source
AI summary
An integrated circuit (IC) package comprising an IC die, the IC die having a first surface and an opposing second surface. The IC die comprises a semiconductor material. The first surface comprises an active layer. A thermoelectric cooler (TEC) comprising a thermoelectric material is embedded within the IC die between the first surface and the second surface and adjacent to the active layer. The TEC has an annular shape that is substantially parallel to the first and second surfaces of the IC die. The thermoelectric material is confined between an outer sidewall along an outer perimeter of the TEC and an inner sidewall along an inner perimeter of the TEC. The outer and inner sidewalls are substantially orthogonal to the first and second surfaces of the IC die.