Annular Substrate Support for Photolithography Stability

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Solution Overview

Problem

During photolithography, substrate deformation caused by particles on the substrate or stage can lead to unexpected results due to uneven gas distribution and instability, affecting pattern formation on semiconductor substrates.

Innovation Solution

A lithographic apparatus with a substrate stage that uses a substrate support system with annular openings for gas flow and evacuation, combined with a substrate edge holder to maintain the substrate's position, ensuring even gas distribution and stability by adjusting gas pressure and vacuum levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If particles are present on the substrate backside or stage top surface, then substrate deformation occurs, but manufacturing precision deteriorates

Engineering Contradiction:
Improvesubstrate stabilityVSAvoidpattern formation accuracy
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The harmful particles are removed from the system by implementing a gas flow system that blows away particles from the substrate backside and stage surface, preventing them from causing substrate deformation while maintaining manufacturing precision

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

A gas flow intermediary is introduced between the particles and substrate to prevent direct contact and deformation. The gas acts as a mediator that carries particles away from critical areas, protecting the substrate from harmful particle-induced deformation

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If gas flow is used to remove particles, then substrate stability improves, but device complexity increases

Engineering Contradiction:
Improvesubstrate stabilityVSAvoidgas distribution system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gas distribution system is segmented into multiple gas inlets positioned at different locations around the substrate. This segmentation allows targeted particle removal from specific areas (substrate backside, stage surface) while keeping each gas inlet simple in structure, thereby improving substrate stability without excessive complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The gas flow system is designed to automatically remove particles through passive gas flow patterns created by the inlets. The system self-regulates particle removal without requiring complex control mechanisms, maintaining substrate stability while minimizing device complexity

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution stabilizes the substrate, preventing deformation and ensuring accurate pattern formation by maintaining a consistent gap between the substrate and the support, thereby improving the reliability of photolithography processes.

Implementation Method 1

a source is coupled to the first opening and is configured to supply first gas/air to a bottom surface of the substrate through the first opening

Methodology Applied
Scientific EffectGas flow:

Implementation Method 2

a vacuum is configured to draw/evacuate second gas/air along a top surface of the substrate support through second openings

Methodology Applied
Scientific EffectVacuum evacuation: Vacuum

Data Source

PatentUS11079690B2Apparatus and method for processing a substrate using the same
Publication Date: 2021.08.03 XIA TAI XIN SEMICON QING DAO LTD
  • US11079690B2 patent drawing
  • US11079690B2 patent drawing
  • US11079690B2 patent drawing

AI summary

An apparatus for processing the substrate includes a substrate stage and a source. The substrate stage is configured to support a substrate thereon. The substrate stage includes a substrate support formed with a first opening therein. The first opening is an annular opening. The source is coupled to the first opening and is configured to supply first gas/air to a bottom surface of the substrate through the first opening.