Power Semiconductor Module with Anodized Aluminum Oxide Insulation
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Solution Overview
Problem
Existing power semiconductor modules face challenges in achieving effective electrical insulation between components, such as power regions and heat sinks, while maintaining thermal conductivity and breakdown strength, which is crucial for high-voltage and high-current operations.
Innovation Solution
The use of an aluminum substrate with an anodized aluminum oxide layer to electrically insulate semiconductor chips from the substrate, combined with a conductive layer and electrical insulation material, allows for the creation of a power semiconductor module that can handle high voltages and currents while preventing damage from high temperatures during connection processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrical insulation layers are used to electrically insulate components, then electrical insulation is improved, but thermal conductivity deteriorates
Solution Approach 1:
The patent introduces an aluminum oxide layer as an intermediary substance between the aluminum substrate and semiconductor chips. This layer serves as a mediator that simultaneously provides electrical insulation while maintaining thermal conductivity, resolving the contradiction between these two opposing requirements.
Solution Approach 2:
The patent changes the material parameter from conventional electrical insulation materials to aluminum oxide, which has unique properties of being both electrically insulating and thermally conductive. This parameter change allows the system to achieve both electrical insulation and thermal management simultaneously.
2Reliability
If breakdown strength is increased for high-voltage operation, then electrical insulation is improved, but device complexity increases
Solution Approach 1:
The aluminum oxide layer performs multiple functions simultaneously: it provides electrical insulation, achieves high breakdown strength for voltage isolation, and maintains thermal conductivity. This multi-functionality eliminates the need for additional separate components, thereby reducing device complexity while improving breakdown strength.
Solution Approach 2:
The patent uses aluminum oxide, a composite material with specific properties that combine electrical insulation and thermal conductivity. This material choice allows the system to achieve high breakdown strength without increasing structural complexity, as the material itself provides multiple necessary functions.
3Temperature
If thermal conductivity is maintained for heat dissipation, then temperature management is improved, but electrical insulation deteriorates
Solution Approach 1:
The aluminum oxide layer acts as a thermal mediator that conducts heat away from the semiconductor chips while simultaneously serving as an electrical insulator. This intermediary material resolves the contradiction by allowing thermal energy transfer while blocking electrical current.
Solution Approach 2:
The patent selects aluminum oxide with specific parameter values that enable high thermal conductivity while maintaining electrical insulation properties. By carefully selecting materials with appropriate parameter ranges, the system achieves both heat dissipation and electrical isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures reliable electrical insulation and thermal management, enabling the module to operate efficiently with high voltages and currents while protecting the aluminum oxide layer from temperature-sensitive damage.
Implementation Method 1
anodizing the first substrate in order to produce a first aluminum oxide layer
Data Source
AI summary
A power semiconductor module includes a first substrate, wherein the first substrate includes aluminum, a first aluminum oxide layer arranged on the first substrate, a conductive layer arranged on the first aluminum oxide layer, a first semiconductor chip, wherein the first semiconductor chip is arranged on the conductive layer and is electrically connected thereto, and an electrical insulation material enclosing the first semiconductor chip, wherein the first aluminum oxide layer is configured to electrically insulate the first semiconductor chip from the first substrate.