Anodized Dicing Trench Sidewalls for Chip Edge Sealing
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Solution Overview
Problem
Semiconductor chip side walls are prone to mechanical and chemical damage during and after separation from the wafer, particularly due to metal plating and soldering processes that compromise chip integrity.
Innovation Solution
Form dicing trenches in a semiconductor wafer and anodize the side walls to generate an anodic oxide layer, providing a high-quality, uniform, and conformal sealing that protects the chip edges during subsequent processing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal plating and soldering processes are applied after chip separation, then packaging and electrical connection are achieved, but chip side wall integrity deteriorates and chip cracks occur
Solution Approach 1:
The patent applies anodic oxidation to form a protective oxide layer on the chip side walls before the chips are separated from the wafer and before metal plating/soldering processes are applied. This preliminary protective action prevents mechanical and chemical damage during subsequent processing steps, resolving the contradiction between achieving reliable electrical connections and maintaining side wall integrity.
Solution Approach 2:
The anodic oxide layer acts as an intermediary protective barrier between the chip side walls and the harmful metal plating/soldering processes. This intermediate layer prevents direct contact between the vulnerable side walls and the damaging chemicals/mechanical processes, allowing packaging operations to proceed without compromising chip integrity.
2Productivity
If dicing trenches are formed in semiconductor wafer, then chip separation is enabled, but side walls of dicing trenches become vulnerable to damage
Solution Approach 1:
The anodic oxidation process is applied to the dicing trench side walls immediately after dicing but before chip separation and subsequent processing. This preliminary strengthening action reinforces the side walls while maintaining the efficiency of chip separation, resolving the contradiction between productivity and side wall strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The anodic oxide layer effectively seals the chip side walls, preventing damage and contamination, ensuring reliable chip integrity and performance.
Implementation Method 1
The side walls of the dicing trenches are anodized to generate an anodic oxide layer at the side walls of the dicing trenches
Data Source
AI summary
A method of manufacturing semiconductor chips having a side wall sealing is described. The method includes forming dicing trenches in a semiconductor wafer. The side walls of the dicing trenches are anodized to generate an anodic oxide layer at the side walls of the dicing trenches. Semiconductor chips are separated from the semiconductor wafer.