Anomalous Hall Semiconductor Structure for Current-Tuned Polarity Shift

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Solution Overview

Problem

Existing semiconductor devices fail to effectively change the polarity and magnitude of the anomalous Hall effect (AHE) signal in response to variations in input current and magnetization direction, limiting their functionality and applications.

Innovation Solution

A semiconductor device comprising a free magnetization layer with a ferromagnetic and nonmagnetic metal layer, where the Hall voltage is generated by an AHE, and controlled input currents adjust the Hall voltage to achieve local minimum and maximum values based on current thresholds, allowing simultaneous changes in polarity and magnitude.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional Hall effect devices are used, then Hall voltage is generated by external magnetic field, but the device cannot simultaneously change polarity and magnitude of AHE signal according to input current and magnetization direction

Engineering Contradiction:

Improvecapability to change polarity and magnitude of AHE signalVSAvoidstructure complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent changes the control parameters from external magnetic field to input current and magnetization direction. By varying the input current value and magnetization direction, the device can simultaneously control both the polarity and magnitude of the AHE signal, achieving enhanced adaptability without significant structural complexity increase

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure consisting of ferromagnetic layer and nonmagnetic metal layer. This composite material configuration enables the generation of AHE signal while allowing independent control of polarity through magnetization direction and magnitude through input current, resolving the technical contradiction

Inventive Principle:

Principle #40Composite materials

2Measurement precision

If external magnetic field is used to generate Hall voltage, then Hall voltage is generated, but the device lacks precise control over polarity and magnitude

Engineering Contradiction:

Improvecontrol precision of Hall voltageVSAvoidenergy consumption

Core Design Contradiction:

Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The patent replaces the external magnetic field control mechanism with an electrical current control mechanism. By using input current to control the AHE signal, the device achieves precise control over both polarity and magnitude while eliminating the need for complex magnetic field generation systems, thereby reducing energy consumption

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Adaptability or versatility

If conventional Hall effect is used, then Hall voltage is generated by external magnetic field, but the functionality is limited

Engineering Contradiction:

ImprovefunctionalityVSAvoiddetection complexity

Core Design Contradiction:

Adaptability or versatilityVSDifficulty of detecting and measuring

Solution Approach 1:

The patent transforms the control mechanism from external magnetic field to internal magnetization direction and input current. This parameter change enables the device to simultaneously control polarity and magnitude of the AHE signal, significantly enhancing functionality while maintaining straightforward detection through Hall voltage electrodes

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device enables precise control over Hall voltage by adjusting input currents, enhancing its functionality and potential applications in memory devices like MRAM, STT MRAM, and SOT MRAM by utilizing the AHE for data storage.

Implementation Method 1

a Hall voltage is generated by an AHE occurring in the ferromagnetic layer of the free magnetization layer due to an input current flowing in the nonmagnetic metal layer

Methodology Applied

Scientific EffectAnomalous Hall effect: Hall Effect

Data Source

PatentEP4658017A1Semiconductor device capable of simultaneously changing polarity and magnitude of anomalous hall effect signal according to input current, operating method thereof, and system

Publication Date: 2025.12.03 UI (UNIVERSITY IND FOUNDATION) YONSEI UNIVERSITY

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AI summary

A semiconductor device includes a free magnetization layer including a ferromagnetic layer and a nonmagnetic metal layer including current electrodes receiving an input current and Hall voltage electrodes outputting a Hall voltage. The Hall voltage is generated by an anomalous Hall effect occurring in the ferromagnetic layer of the free magnetization layer due to the input current flowing in the nonmagnetic metal layer. The Hall voltage has one of a local minimum value and a local maximum value when a value of the input current sequentially changes from a first value to a second value. One of the first value and the second value is greater than the other one of the first value and the second value.