Antenna Diode Circuit for Semiconductor Charge Discharge
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The manufacture of semiconductor devices using FDSOI technology faces inefficiencies, power consumption issues, and space constraints due to adverse antenna effects in existing antenna diode implementations, particularly in memory devices and standard cells.
Innovation Solution
A method involving an antenna diode design with a common forward-bias diode and multiple reverse-bias diodes is implemented, where the diodes are strategically placed on isolated p-wells to discharge accumulated charges on signal lines, reducing the number of diodes required and minimizing die area usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If traditional antenna diodes are implemented in FDSOI devices, then charge accumulation is reduced, but power consumption increases and current leakage occurs
Solution Approach 1:
The patent extracts the charge discharge function from continuous operation and implements it only when needed through plasma process detection. The antenna diode is isolated during normal operation and only activated when plasma processes are detected, eliminating continuous power consumption while maintaining charge protection capability.
Solution Approach 2:
The patent implements preliminary detection of plasma processes and pre-activates the antenna diode before charge accumulation becomes problematic. The system monitors plasma processes and prepares the discharge path in advance, preventing charge buildup rather than reacting to it after it occurs.
2Object-affected harmful factors
If antenna diodes are implemented in FDSOI devices, then charge accumulation is reduced, but device area increases
Solution Approach 1:
The patent merges the antenna diode structure with existing FDSOI device components, specifically utilizing the well structures already present in the device architecture. By integrating the antenna diode with existing wells rather than adding separate structures, the patent reduces the additional area required while maintaining charge discharge functionality.
Solution Approach 2:
The patent designs the antenna diode to serve multiple functions: it acts as both a charge discharge path and utilizes existing well structures for other device functions. This multi-functionality reduces the overall area requirement by making the antenna diode structure serve purposes beyond just charge management.
3Object-affected harmful factors
If antenna diodes are implemented in FDSOI devices, then charge accumulation is reduced, but device complexity increases
Solution Approach 1:
The patent implements a self-service mechanism where the antenna diode automatically activates and deactivates based on plasma process detection without requiring external control circuitry. The diode monitors its own operational context and adjusts its state accordingly, reducing the need for additional control logic and simplifying the overall device architecture.
4Reliability
If plasma processing is used in manufacturing, then device performance is improved, but antenna effects cause charge accumulation
Solution Approach 1:
The patent converts the harmful antenna effect into a beneficial detection mechanism. By monitoring the charge accumulation that would normally be harmful, the system detects plasma process conditions and activates the antenna diode to discharge charges, transforming the harmful effect into a useful signal for process control and charge management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces charge accumulation on signal lines, improves power management, and optimizes space usage in semiconductor devices, enhancing the efficiency and performance of memory devices and standard cells.
Implementation Method 1
A first antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a first signal line of the semiconductor device is provided for discharging accumulated charges on the first signal line
Data Source
AI summary
At least one method, apparatus and system disclosed involves an antenna diode design for a semiconductor device. A first common diode operatively coupled to a ground node and to a p-well layer serving as an isolated p-well that is formed over a deep n-well that is adjacent to an n-well in a semiconductor device is provided. A first antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a first signal line of the semiconductor device is provided for discharging accumulated charges on the first signal line. A second antenna diode formed on the isolated p-well operatively coupled to the p-well layer and operatively coupled to a second signal line of semiconductor device is provided for discharging accumulated charges on the second signal line.