Antenna Element on Silicon Substrate for Miniaturization
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Solution Overview
Problem
Existing semiconductor devices with chip antennas face challenges in miniaturization due to the thickness and size limitations of the antenna elements, particularly when formed on resin substrates, which also affect antenna accuracy and performance, especially at high frequency bands.
Innovation Solution
The use of a silicon substrate with an insulating film to form the antenna element, where the radio transceiver is on one surface and the signal input pad and ground layer are on the opposite surface with connection portions penetrating the substrate, improving miniaturization and processing accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a chip antenna is formed by laminating multiple ceramic plates, then the antenna can be electrically connected to matching components, but the thickness of the antenna element increases
Solution Approach 1:
The patent transitions from a three-dimensional stacked ceramic structure to a two-dimensional planar antenna pattern formed directly on the substrate surface. This dimensional change eliminates the need for multiple laminated layers, reducing thickness while maintaining electrical connection functionality through direct patterning of conductive layers on the substrate.
Solution Approach 2:
The invention extracts the antenna function from a separate ceramic chip component and integrates it directly into the substrate structure. By forming the antenna pattern directly on the substrate, the patent eliminates the need for discrete ceramic plates and their associated lamination processes, thereby reducing overall thickness.
2Length of stationary object
If an antenna pattern is formed on a resin substrate, then the device size in thickness direction decreases, but the antenna size in surface direction increases
Solution Approach 1:
The patent changes the dielectric constant parameter of the substrate material to optimize antenna performance. By selecting a substrate with appropriate dielectric properties, the antenna can achieve the required electrical characteristics with reduced surface dimensions, resolving the trade-off between thickness reduction and surface area increase.
3Length of stationary object
If an antenna pattern is formed on a resin substrate, then the device thickness is reduced, but the antenna accuracy deteriorates
Solution Approach 1:
The patent employs a composite substrate structure combining resin with ceramic layers or other materials having superior dimensional stability and dielectric properties. This composite approach maintains the thin-profile advantage of resin substrates while incorporating the precision and accuracy benefits of ceramic materials in critical antenna formation regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for reduced size and improved antenna characteristics, particularly effective in high frequency bands, by utilizing the higher dielectric constant of silicon substrates and enhancing size accuracy, leading to more precise antenna formation.
Implementation Method 1
an insulating film for electrically insulating the silicon substrate from the antenna
Implementation Method 2
the connection portion is disposed to penetrate the silicon substrate
Data Source
AI summary
An antenna element includes: a radio transceiver that transmits and receives a radio wave; a signal input pad; a ground layer; an antenna that has a connection portion for electrically connecting the radio transceiver to the ground layer and the signal input pad; a silicon substrate on which the antenna is formed; and an insulating film for electrically insulating the silicon substrate from the antenna. The radio transceiver is disposed on a first surface of the silicon substrate with the insulating film interposed therebetween. The ground layer and the signal input pad are disposed on a second surface of the silicon substrate opposite to the first surface thereof with the insulating film interposed therebetween. The connection portion is disposed to penetrate the silicon substrate.