Anti-Arcing Passivation Pattern for Stacked Semiconductor Dies
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Solution Overview
Problem
The semiconductor industry faces challenges in packaging System-on-Integrated-Circuit (SoIC) components due to limitations in miniaturization, higher speed, greater bandwidth, lower power consumption, and latency, requiring innovative packaging techniques that enhance integration density and efficiency.
Innovation Solution
The method involves a chip-to-wafer fusion bonding process followed by hybrid bonding, where semiconductor dies are stacked and bonded using dielectric and conductive layers, with insulating encapsulation and anti-arcing patterns to minimize arcing damage and improve yield, and the use of conductive terminals for electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If chip-to-wafer fusion bonding and hybrid bonding are used to achieve high integration density, then miniaturization and component stacking are improved, but arcing damage between adjacent conductive elements increases
Solution Approach 1:
The anti-arcing pattern is formed on the passivation layer before subsequent processing steps to proactively prevent arcing damage. This preliminary protective structure counteracts the harmful electrical discharge effects that would otherwise occur between adjacent conductive elements during device operation, thereby protecting the underlying conductors while maintaining high integration density
Solution Approach 2:
The anti-arcing pattern acts as an intermediary protective layer between adjacent conductive elements. This intermediate structure interrupts potential arcing paths by providing a non-conductive barrier on the passivation layer, thereby preventing direct electrical discharge between nearby conductors while allowing the high-density interconnect architecture to function
2Object-affected harmful factors
If multiple bonding layers and encapsulation structures are added to protect against arcing, then arcing damage is reduced, but device complexity and manufacturing steps increase
Solution Approach 1:
The anti-arcing pattern is applied locally on the passivation layer only where arcing protection is needed, rather than adding global structural complexity. This localized approach provides targeted protection against arcing damage while maintaining the simplicity of the overall device architecture and minimizing additional manufacturing complexity
Solution Approach 2:
The anti-arcing pattern is formed as part of the existing passivation layer processing sequence, integrating the protective function into already-planned manufacturing steps. By incorporating the anti-arcing structure during standard fabrication processes rather than adding separate complex steps, the solution reduces arcing damage without proportionally increasing device complexity
Data Source
AI summary
A semiconductor structure including a first semiconductor die, a second semiconductor die, a passivation layer, an anti-arcing pattern, and conductive terminals is provided. The second semiconductor die is stacked over the first semiconductor die. The passivation layer covers the second semiconductor die and includes first openings for revealing pads of the second semiconductor die. The anti-arcing pattern is disposed over the passivation layer. The conductive terminals are disposed over and electrically connected to the pads of the second semiconductor die.