Anti-Back-Sputtering Layer for Defect-Free Conductive Features
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Solution Overview
Problem
Challenges arise during the scaling-down process of semiconductor structures, leading to issues with quality, yield, performance, and reliability, particularly due to defects from back sputtering of underlying conductive layers during hard mask layer patterning.
Innovation Solution
Incorporation of an anti-back sputtering layer with etching selectivity to the hard mask structure, which prevents defects by protecting underlying conductive features during patterning processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the dimensions of semiconductor structures are scaled down to meet increasing computing demand, then computing ability is improved, but quality and yield deteriorate due to defects from back sputtering during patterning
Solution Approach 1:
An anti-back-sputtering layer is introduced as an intermediary protective layer between the conductive layer and the etching environment during patterning. This layer prevents direct exposure of the conductive layer to back sputtering, thereby eliminating defects while allowing the scaling-down process to continue for improved computing ability
Solution Approach 2:
The anti-back-sputtering layer is formed in advance before the patterning process. This preliminary protective layer is deposited on the conductive layer prior to any etching operations, proactively preventing back sputtering defects before they can occur during subsequent manufacturing steps
2Speed
If the dimensions of semiconductor structures are scaled down, then computing ability is improved, but manufacturing precision deteriorates due to defects in conductive features
Solution Approach 1:
The anti-back-sputtering layer serves as a protective intermediary that prevents etching damage to the conductive layer during patterning. This ensures that conductive features maintain their intended dimensions and quality even as overall structure sizes are reduced for higher computing performance
3Reliability
If an anti-back sputtering layer is added to prevent back sputtering defects, then yield is improved, but device complexity increases
Solution Approach 1:
The anti-back-sputtering layer is designed as a temporary, disposable protective layer that performs its function during the patterning process and is subsequently removed. This disposable approach provides the necessary protection against back sputtering without permanently increasing device complexity, as the layer is discarded after serving its protective purpose
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the yield of semiconductor fabrication by preventing defects in conductive features, enhancing the reliability and performance of semiconductor structures.
Implementation Method 1
defects (such as short of conductive features) originating from the back sputtering of underlying conductive layer during the patterning of the hard mask layers
Data Source
AI summary
The present application discloses a semiconductor structure and a method for fabricating the semiconductor device. The semiconductor structure includes a substrate; a conductive feature positioned on the substrate; an anti-back sputtering layer positioned on the conductive feature; and a first hard mask structure positioned on the anti-back sputtering layer. The anti-back sputtering layer has etching selectivity to the first hard mask structure.