Anti-Fuse Contact Structure for Localized Breakdown Control
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Solution Overview
Problem
Current anti-fuse devices have high uncertainty in resistance after breakdown due to large contact areas between the gate and anti-fuse material layer, leading to potential data misjudgment.
Innovation Solution
The anti-fuse device design includes a substrate with a doped region, dielectric layer, and contacts that reduce the contact area between the anti-fuse material layer and the first contact by controlling the size of openings, allowing for concentrated breakdown and eliminating the need for a gate, thereby reducing uncertainty and increasing device density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate contacts the anti-fuse material layer with a large contact area, then the device can be operated, but the breakdown position becomes uncertain and resistance has high uncertainty
Solution Approach 1:
The patent divides the contact structure into discrete contact plugs formed through openings in the dielectric layer, rather than using a continuous gate structure. This segmentation localizes the contact area to specific regions, enabling precise control over where breakdown occurs in the anti-fuse material layer, thereby improving both reliability and manufacturing precision.
2Productivity
If a gate structure is used to operate the anti-fuse device, then the device can be controlled, but the device area becomes large
Solution Approach 1:
The patent extracts and removes the gate structure from the anti-fuse device, retaining only the essential contact plugs through openings in the dielectric layer. This extraction eliminates the large area requirement associated with gates while preserving the core functionality of operating the anti-fuse material layer, thereby increasing device density and reducing overall device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces the uncertainty of resistance and prevents data misjudgment by concentrating the breakdown of the anti-fuse material layer, allowing for a smaller device area and improved density.
Implementation Method 1
When the anti-fuse device is subjected to operation, the anti-fuse material layer will break down to form a conductive path
Implementation Method 2
The doped region is located in the substrate
Data Source
AI summary
An anti-fuse device including a substrate, a doped region, a dielectric layer, a first contact, an anti-fuse material layer, and a second contact is provided. The doped region is located in the substrate. The dielectric layer is located on the substrate and has a first opening and a second opening. The first opening and the second opening respectively expose the doped region. The first contact is located in the first opening. The anti-fuse material layer is located between the first contact and the doped region. The second contact is located in the second opening and is electrically connected to the doped region.