Anti-Fuse Semiconductor Structure for Controlled Breakdown Positioning
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Solution Overview
Problem
The random breakdown position of anti-fuses in existing technologies adversely affects consistency in programming, leading to inconsistent resistance values for logic operations.
Innovation Solution
A semiconductor structure is fabricated with a conductive plug on the side wall of a first conductive layer, where its projection overlaps with the gate dielectric layer projection, allowing controlled breakdown positioning to ensure consistent programming.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrical breakdown programming is used for anti-fuse, then programming capability is achieved, but breakdown position becomes random affecting consistency
Solution Approach 1:
The patent introduces a conductive plug structure with specific geometric characteristics (projection overlapping the gate dielectric layer projection) that creates a localized field concentration region. This local structural modification ensures that breakdown occurs at a predetermined position rather than randomly, achieving both programming capability and position control consistency.
Solution Approach 2:
The conductive plug is formed in advance during the manufacturing process, establishing the breakdown position before the actual programming operation. This preliminary structuring of the electric field distribution ensures that when programming occurs, the breakdown will happen at the intended location, improving both reliability and manufacturing precision.
2Use of energy by moving object
If breakdown position is not controlled, then programming can be performed, but energy consumption increases due to higher voltage requirements
Solution Approach 1:
The conductive plug creates a localized region of high electric field concentration where the projection of the conductive plug overlaps with the projection of the gate dielectric layer. This local field enhancement allows breakdown to occur at lower overall voltage levels while maintaining consistent positioning, thereby reducing energy consumption and improving programming reliability simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves centralized breakdown positions, ensuring consistent programming and reducing energy consumption by fixing the breakdown position and minimizing voltage requirements.
Implementation Method 1
the anti-fuse may be programmed by means of electrical breakdown
Data Source
AI summary
Embodiments disclose a semiconductor structure and a method for fabricating the same. The semiconductor structure includes: a substrate, a gate dielectric layer, a first conductive layer, and a conductive plug. The gate dielectric layer is provided on the substrate, and the first conductive layer is provided on the gate dielectric layer. The conductive plug is provided on the gate dielectric layer and covers a side wall of the first conductive layer, where a projection of the conductive plug on the substrate and a projection of the gate dielectric layer on the substrate at least partially overlap. By providing the conductive plug, a breakdown current can break down a region of the gate dielectric layer corresponding to the conductive plug by means of the conductive plug. That is, a breakdown position is adjusted by controlling an overlapping position between the conductive plug and the gate dielectric layer.