Anti-Fuse Memory Programming With Sense-Feedback Over-Programming Control
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Solution Overview
Problem
Anti-fuse memory cells in arrays are prone to over-programming due to inappropriate programming schemes, leading to potential disturbances in the memory device.
Innovation Solution
The anti-fuse memory device incorporates a reference current circuit and a timing controller that stops the program operation after a sense amplifier changes the state of the readout data signal for a predetermined time duration, ensuring precise programming by controlling the program current through a current mirror circuit and using a shared reference current circuit for multiple modules.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a conventional programming scheme is applied to anti-fuse memory cells, then programming speed is improved, but over-programming occurs causing program disturbance
Solution Approach 1:
The patent implements a feedback mechanism where the sense amplifier continuously monitors the state of anti-fuse memory cells during programming. When the cell state changes (indicating successful programming), the feedback signal stops the programming operation, preventing over-programming while maintaining efficient programming speed.
Solution Approach 2:
The programming scheme dynamically adjusts the programming process based on real-time cell state monitoring. The system transitions from a static fixed-duration programming approach to a dynamic adaptive approach that stops programming when the cell reaches the programmed state, optimizing both speed and precision.
2Manufacturing precision
If programming continues for fixed duration to ensure completion, then programming thoroughness is improved, but over-programming and disturbance increase
Solution Approach 1:
The sense amplifier provides real-time feedback on cell programming status. When the cell transitions to the programmed state, the feedback signal immediately terminates the programming operation, ensuring complete programming without excessive duration that would cause disturbance.
Solution Approach 2:
The system performs preliminary monitoring of cell state during programming. By detecting the programming completion point in advance through the sense amplifier, the system stops programming before over-programming occurs, preventing harmful disturbances.
3Adaptability or versatility
If separate reference current circuits are provided for each module, then module independence is improved, but layout area increases
Solution Approach 1:
The patent merges the reference current circuits into a shared resource that serves multiple anti-fuse modules. This consolidation reduces the total layout area while maintaining proper current reference functionality through the current mirror circuit that distributes the reference current to multiple modules.
Solution Approach 2:
The reference current circuit is designed with universal functionality to serve multiple modules simultaneously. The current mirror circuit enables a single reference current source to provide accurate current references to multiple anti-fuse modules, achieving multi-functionality without sacrificing module performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents over-programming, ensures precise programming of anti-fuse memory cells, reduces program disturbance, and optimizes layout area by sharing a reference current circuit across modules.
Implementation Method 1
controlling the program current through a current mirror circuit
Data Source
AI summary
An anti-fuse memory device includes an anti-fuse module, a reference current circuit and a controller. A write enable signal enables a write controller and a write buffer of the anti-fuse module to program a selected anti-fuse memory cell in an anti-fuse array of the anti-fuse module, and a timing controller of the anti-fuse module stops a program operation of the anti-fuse array after a sense amplifier of the anti-fuse module changes a state of a readout data signal for a predetermined time duration.