Anti-Parallel Diode Device With Voltage Balancing Resistors

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Solution Overview

Problem

Existing anti-parallel diode devices face issues with unbalanced voltages across diodes during electrostatic discharge (ESD) events, leading to potential diode breakdown and damage, especially when diodes are in reverse-bias states.

Innovation Solution

The anti-parallel diode device design includes semiconductor diodes of different conductivity types, where one side of the diodes is forwardly turned on, and the other side has clearly defined reverse voltages, with a layout that minimizes area consumption in integrated circuits (ICs) and allows for voltage dividing potentials between diode strings to balance voltages, preventing excessive reverse-bias voltages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If diodes are used in anti-parallel configuration for ESD protection, then ESD protection function is achieved, but unbalanced cross-voltages cause breakdown and damage to diodes

Engineering Contradiction:
ImproveESD protection capabilityVSAvoidunbalanced cross-voltage damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A voltage balancing circuit is introduced as an intermediary component between the anti-parallel diodes and the reference voltage. This circuit includes resistors connected in series with each diode string, which act as mediators to distribute and balance the cross-voltages across the diodes during reverse-bias states, preventing any single diode from experiencing excessive voltage that could cause breakdown.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention changes the electrical parameters of the diode strings by introducing series resistors that modify the voltage distribution characteristics. These resistors alter the impedance balance between the two anti-parallel diode strings, ensuring that during ESD events, the voltages across both diode strings remain balanced and within safe operating limits.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If voltage clamping is performed to protect IC, then ESD protection is provided, but layout area consumption increases

Engineering Contradiction:
Improvevoltage clamping protectionVSAvoidlayout area in IC
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The voltage balancing circuit is merged with the existing anti-parallel diode structure by integrating resistors directly into the diode string connections. This combination allows the balancing function to be achieved without adding separate discrete components, thereby minimizing the additional layout area required while maintaining effective voltage clamping protection.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively minimizes the effect of unbalancing voltages across diodes, reducing the risk of damage and allowing for a wider range of normal operating signals and higher clamping voltages without affecting IC operations.

Implementation Method 1

The second semiconductor is in contact with the first semiconductor, so that the first semiconductor and the second semiconductor form a first diode

Methodology Applied
Scientific Effectp-n junction effect: Diode

Implementation Method 2

The third semiconductor is in contact with the first semiconductor, so that the first semiconductor and the third semiconductor form a second diode

Methodology Applied
Scientific Effectp-n junction effect: Diode

Implementation Method 3

A first terminal of the third diode is electrically connected to the first semiconductor. The first terminal of the third diode is of the second conductivity type

Methodology Applied
Scientific EffectVoltage reference effect:

Data Source

PatentUS11450656B2Anti-parallel diode device
Publication Date: 2022.09.20 RICHWAVE TECH CORP
  • US11450656B2 patent drawing
  • US11450656B2 patent drawing
  • US11450656B2 patent drawing

AI summary

An anti-parallel diode device includes a first semiconductor, a second semiconductor, a third semiconductor, and a third diode. The first semiconductor is of a first conductivity type, and the second semiconductor and the third semiconductor are of a second conductivity type. The second semiconductor is in contact with the first semiconductor, so that the first semiconductor and the second semiconductor form a first diode. The third semiconductor is in contact with the first semiconductor, so that the first semiconductor and the third semiconductor form a second diode. A first terminal of the third diode is electrically connected to the first semiconductor. The first terminal of the third diode is of the second conductivity type.