Anti-Punch-Through Semiconductor Isolation Region
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Solution Overview
Problem
As semiconductor devices are miniaturized for high integration, the diffusion of dopants during the formation of doped polysilicon gates can cause electric punch-through between adjacent source/drain regions, leading to low operation speed, performance inefficiency, and reliability issues such as short or open circuits.
Innovation Solution
An isolation region is formed between adjacent source/drain regions using a silicon oxide insulation layer, which prevents dopant diffusion and electric punch-through, achieved through a manufacturing method involving substrate preparation, insulation layer patterning, trench formation, and ion-implanting of the source/drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the distance between devices is reduced to achieve high integration, then device density increases, but dopant diffusion causes electric punch-through between adjacent source/drain regions
Solution Approach 1:
The patent introduces isolation regions that segment the substrate into separate zones for adjacent trench devices. These isolation regions physically divide the continuous substrate into discrete segments, preventing dopant diffusion between adjacent source/drain regions while maintaining high device density through close spacing of the segmented structures.
Solution Approach 2:
The isolation regions act as intermediary structures between adjacent source/drain regions. These intermediary isolation regions block the harmful dopant diffusion path while allowing the beneficial close spacing for high integration, thus mediating between the conflicting requirements of high density and reliability.
2Ease of manufacture
If dopant diffusion is allowed during gate formation, then gate doping is achieved, but source/drain region extension causes abnormal electric connection
Solution Approach 1:
The isolation regions are formed preliminarily before the gate doping process. This preliminary action creates protective barriers that prevent dopant diffusion into source/drain regions during subsequent gate formation steps, allowing gate doping to proceed without causing unwanted source/drain region extension or abnormal electric connections.
Solution Approach 2:
The isolation regions provide preliminary anti-action against dopant diffusion. By establishing these protective structures before the harmful dopant diffusion occurs during gate formation, the patent preemptively counteracts the potential source/drain region extension and abnormal electric connection problems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The isolation region effectively prevents abnormal electric connections between semiconductor devices, enhancing performance efficiency and yield by preventing dopant diffusion and reducing the risk of short or open circuits.
Implementation Method 1
the method of forming the source/drain region is, for example, ion-implanting method
Data Source
AI summary
An anti-punch-through semiconductor device is provided. The anti-punch-through semiconductor device includes a substrate, at least an isolation region and a plurality of trench devices. The trench device is disposed in the substrate. The trench device includes a source/drain region. The source/drain region of the trench device is disposed at the bottom of the trench device. The isolation region is disposed in the substrate and between the source/drain regions of each trench device.