Anti-Fuse Bit Cell Layout Using Continuous Active Regions
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Solution Overview
Problem
Traditional anti-fuse bit cell layouts suffer from the LOD effect, which affects transistor performance near the edge of the oxide defined region, and are not area efficient, leading to wasted space on semiconductor dies.
Innovation Solution
The use of continuous active oxide regions with multiple-transistor bit cells, incorporating dummy gate metal layers and voltage-relaxing devices to eliminate the LOD effect and improve performance, while reducing memory cell area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional anti-fuse bit cell layouts are used, then the structure is simple, but the LOD effect occurs affecting transistor performance near oxide defined region edges
Solution Approach 1:
Dummy gate metal layers are added at the edges of the oxide defined region before transistor fabrication to pre-compensate for the LOD effect. These dummy structures are formed in advance to ensure uniform transistor characteristics across the device area, eliminating performance variations near the edges.
Solution Approach 2:
The patent applies different structures to different regions: dummy gate metal layers are placed specifically at the edges of the oxide defined region where the LOD effect occurs, while the central region maintains its original simple layout. This localized modification targets only the problematic areas without complicating the entire structure.
2Area of stationary object
If traditional anti-fuse bit cell layouts are used, then the layout is simple, but area efficiency is poor leading to wasted space on semiconductor dies
Solution Approach 1:
Multiple transistors are merged into a single continuous oxide defined region, eliminating the need for separate oxide regions for each transistor. This consolidation reduces the total area required while the dummy gate metal layers are integrated into the same continuous region, maintaining structural simplicity.
Solution Approach 2:
The patent extends the oxide defined region into a continuous two-dimensional area rather than using separate discrete regions for each transistor. This dimensional approach allows multiple transistors to share the same oxide region, significantly improving area efficiency while keeping the layout straightforward.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively eliminates the LOD effect, enhances reading/programming performance, and optimizes area utilization in anti-fuse bit cells.
Implementation Method 1
A gate dielectric of the programming MOS transistor may be broken down to cause the gate and the source or drain of the programming MOS transistor to be interconnected
Data Source
AI summary
A memory array includes a continuous active region extending along a direction. The memory array includes a first bit cell, which includes a first programming device and a pair of first reading devices defined on the continuous active region. The memory array includes a first programing word line coupled to a gate of the first programing device. The memory array includes a first reading word line coupled to gates of the pair of first reading devices. The memory array includes a bit line, wherein a first one of the pair of first reading devices is coupled between a first source/drain node of the first programing device and the bit line.