Anti-fuse Memory Cell Continuous Active Region Layout
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Solution Overview
Problem
Current anti-fuse memory technologies face challenges in optimizing the layout and configuration of anti-fuse memory cells to minimize area usage while maintaining efficient programming and reading operations, often resulting in increased space requirements due to design rule limitations.
Innovation Solution
The proposed solution involves configuring anti-fuse memory cells with a continuous active region and specific transistor arrangements, including a reading device, a programming device, and a dummy device, to reduce space between memory cells and adhere to relaxed Design Rule Check (DRC) limitations, allowing for closer placement and reduced area usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If anti-fuse memory cells are configured with traditional layout structures, then programming and reading operations can be performed, but the area required for each cell increases due to design rule limitations
Solution Approach 1:
Multiple memory cells share a common continuous active region, merging what would traditionally be separate active regions into a shared resource. This combining approach reduces redundant structures between cells and minimizes total area while maintaining the ability to independently program and read each cell through individual word line control
Solution Approach 2:
The continuous active region serves multiple memory cells simultaneously, acting as a universal structure that enables both programming and reading operations across multiple cells. The shared active region is controlled by individual word lines for each cell, allowing each cell to perform its full functionality while sharing the common active region infrastructure
2Area of stationary object
If anti-fuse memory cells are placed closer together to reduce area, then space efficiency improves, but design rule check limitations are violated
Solution Approach 1:
By merging the active regions of multiple adjacent memory cells into a single continuous active region, the patent eliminates the need for spacing between individual active regions. This approach allows cells to be placed closer together without violating design rules, as the continuous structure itself satisfies the minimum spacing requirements while maximizing space utilization
3Area of stationary object
If a continuous active region is shared by multiple memory cells, then space between cells is reduced and area efficiency improves, but the complexity of maintaining proper electrical isolation and control increases
Solution Approach 1:
The continuous active region is segmented into multiple functional sections, each corresponding to a specific memory cell. These segments are electrically isolated and controlled by individual word lines applied to different gates, allowing independent operation of each cell while sharing the continuous active region structure
Solution Approach 2:
Gates serve as intermediary elements between the control circuitry and the shared continuous active region. Each gate is controlled by a specific word line and acts as a mediator that enables or disables current flow through particular segments of the continuous active region, providing electrical isolation and control without requiring physical separation of the active regions
Data Source
AI summary
A structure includes a word line, a bit line, and an anti-fuse cell. The anti-fuse cell includes a reading device, a programming device, and a dummy device. The reading device includes a first gate coupled to the first word line, a first source/drain region coupled to the bit line, and a second source/drain region. The first source/drain region and the second source/drain region are on opposite sides of the first gate. The programming device includes a second gate, a third source/drain region coupled to the second source/drain region, and a fourth source/drain region. The third source/drain region and the fourth source/drain region are on opposite sides of the second gate. The dummy device includes a third gate, a fifth source/drain region coupled to the fourth source/drain region, and a sixth source/drain region. The fifth source/drain region and the sixth source/drain region are on opposite sides of the third gate.