Antifuse With Comb-Like Top Electrode for Low-Voltage Programming
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Solution Overview
Problem
Existing antifuse structures in the semiconductor industry require high voltage for programming, which can be power-intensive and inefficient.
Innovation Solution
The method involves forming a semiconductor structure with a bottom electrode, an antifuse dielectric layer, and a top electrode with projections extending towards the bottom electrode, creating high aspect ratio channels that concentrate the electrical field for low-power programming by filling the recess and channels with conductive material, allowing for efficient dielectric breakdown.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high voltage is applied for programming antifuse structures, then dielectric breakdown is achieved, but power consumption increases
Solution Approach 1:
The top electrode is segmented into multiple protrusions that extend into the antifuse dielectric layer, creating multiple localized high-field regions. This segmentation allows the programming voltage to be distributed across multiple breakdown points, achieving reliable programming at lower overall voltage levels and reducing power consumption.
Solution Approach 2:
The protrusions of the top electrode create localized regions of high electric field concentration at their tips, where dielectric breakdown is initiated. This local quality enhancement allows breakdown to occur at specific critical points first, enabling programming at lower voltages while maintaining reliability through the distributed nature of multiple protrusions.
2Ease of manufacture
If conventional antifuse structures are used, then manufacturing is simple, but programming requires high voltage
Solution Approach 1:
The top electrode is formed with multiple protrusions using standard semiconductor fabrication techniques such as deposition and etching. This segmented structure is manufactured using conventional processes, maintaining ease of manufacture while enabling lower programming voltage through the distributed field concentration effect of multiple protrusion tips.
3Reliability
If high voltage programming is used, then dielectric breakdown occurs, but programming efficiency decreases
Solution Approach 1:
The protrusions create localized high-field regions that concentrate the electric field at their tips, initiating dielectric breakdown at lower overall voltage levels. This local field enhancement improves programming efficiency by reducing the time and energy required for breakdown while maintaining reliability through the distributed breakdown mechanism across multiple protrusions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables programming of semiconductor devices using relatively low power by magnifying the electrical field at the channel bottoms, facilitating dielectric breakdown and establishing a conductive pathway without the need for high voltage, thus improving programming efficiency.
Implementation Method 1
magnifying the electrical field at the channel bottoms, facilitating dielectric breakdown
Implementation Method 2
facilitating dielectric breakdown and establishing a conductive pathway
Data Source
AI summary
Antifuse structures are provided for use in applications such as field programmable gate arrays and programmable read-only memories. High aspect ratio channels within an antifuse dielectric layer are used to form antifuse electrode projections. The projections are configured to enhance the electric field across the antifuse structures, thereby facilitating dielectric breakdown. The antifuse structures can enable low-voltage programming.