Anti-Fuse Structure Embedded in Interconnect Dielectric
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Solution Overview
Problem
Existing anti-fuse structures in semiconductor fabrication require multiple masking and etching steps, increasing the cost and complexity of integrated circuit production.
Innovation Solution
An anti-fuse structure is embedded within an interconnect dielectric material, with a diffusion barrier liner separating conductive metals and the dielectric material, allowing for the integration of anti-fuse material without additional masking and etching steps by forming a contiguous layer of conductive metals and anti-fuse material within openings in the dielectric material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional anti-fuse structures are integrated within interconnect structure, then anti-fuse functionality is achieved, but multiple extra masking and etching steps are required increasing fabrication cost and complexity
Solution Approach 1:
The patent merges the anti-fuse structure formation with the existing interconnect structure formation process. Both structures share common openings in the interconnect dielectric material and use the same conductive metal layers, eliminating the need for separate masking and etching steps for anti-fuse structures. This integration maintains anti-fuse functionality while reducing fabrication process complexity.
Solution Approach 2:
The conductive metal layers serve dual functions: they form both the interconnect structures for signal transmission and the anti-fuse structures for programmable logic. The same openings in the dielectric material accommodate both interconnect and anti-fuse components, allowing a single fabrication process to create multiple functional elements.
2Reliability
If traditional anti-fuse structures are integrated within interconnect structure, then anti-fuse functionality is achieved, but fabrication cost increases due to extra processing steps
Solution Approach 1:
The patent merges the anti-fuse structure formation with the existing interconnect structure formation process. Both structures share common openings in the interconnect dielectric material and use the same conductive metal layers, eliminating the need for separate masking and etching steps for anti-fuse structures. This integration maintains anti-fuse functionality while reducing fabrication process complexity.
Solution Approach 2:
The conductive metal layers serve dual functions: they form both the interconnect structures for signal transmission and the anti-fuse structures for programmable logic. The same openings in the dielectric material accommodate both interconnect and anti-fuse components, allowing a single fabrication process to create multiple functional elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces fabrication costs and complexity by eliminating the need for extra masking and etching steps while maintaining the functionality of anti-fuse structures within interconnect dielectric materials.
Implementation Method 1
A diffusion barrier liner separates the first conductive metal from any portion of the interconnect dielectric material
Implementation Method 2
performing a reflow anneal which causes portions of the contiguous layer of the first conductive metal to flow into the at least one opening forming a first conductive metal plug within the at least one opening
Data Source
AI summary
An anti-fuse structure is provided in which an anti-fuse material liner is embedded within one of the openings provided within an interconnect dielectric material. The anti-fuse material liner is located between a first conductive metal and a second conductive metal which are also present within the opening. A diffusion barrier liner separates the first conductive metal from any portion of the interconnect dielectric material. The anti-fuse structure is laterally adjacent an interconnect structure that is formed within the same interconnect dielectric material as the anti-fuse structure.