Antifuse Non-Volatile Memory Integration in Image Sensor ICs
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Solution Overview
Problem
Existing digital image sensors face challenges in integrating non-volatile memory due to manufacturing complexity and increased size and cost, as conventional non-volatile memory is sensitive to light and requires separate ICs, which complicates the manufacturing process and increases costs.
Innovation Solution
Incorporating an antifuse non-volatile memory directly on the image sensor IC, which does not rely on trapped charge and is not affected by light, allowing for on-chip storage of data such as sensor ID, defect correction, and operational parameters, and enabling the use of a co-processor for image processing tasks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional non-volatile memory is integrated on the image sensor IC, then data storage capability is improved, but manufacturing complexity increases due to light sensitivity requiring opaque protective material and additional processing steps
Solution Approach 1:
The patent merges the non-volatile memory function with the image sensor IC by using antifuse technology that is not sensitive to light, allowing both functions to coexist on the same chip without requiring separate packaging or additional light-blocking layers. This integration eliminates the need for opaque protective material and reduces manufacturing complexity.
Solution Approach 2:
The patent changes the fundamental parameter of memory technology from traditional charge-trapped non-volatile memory (which is light-sensitive) to antifuse-based non-volatile memory (which is light-insensitive). This parameter change enables direct integration on the image sensor IC without requiring light-blocking protective material.
2Reliability
If non-volatile memory is stored on a separate IC, then light sensitivity issue is resolved, but device size and manufacturing costs increase
Solution Approach 1:
The patent combines the non-volatile memory and image sensor functions into a single IC chip, eliminating the need for separate memory ICs and their associated packaging. This reduces the overall device size while maintaining the reliability benefits of non-volatile memory through the use of light-insensitive antifuse technology.
3Reliability
If opaque protective material is added to cover non-volatile memory, then light sensitivity is prevented, but manufacturing time increases and device yield decreases
Solution Approach 1:
The patent changes the material parameter from light-sensitive charge-trapped memory to light-insensitive antifuse memory, eliminating the need for opaque protective material and associated processing steps. This improves manufacturing efficiency and device yield while maintaining memory reliability.
4Ease of manufacture
If volatile memory is used for all tasks, then manufacturing is simpler, but power consumption increases and data retention is limited
Solution Approach 1:
The patent creates a multi-functional system where antifuse non-volatile memory handles permanent storage tasks (part-tracking, defect correction, color filter array reconstruction, firmware) while volatile memory handles temporary processing tasks. This division of labor reduces overall power consumption and extends data retention capability while maintaining manufacturing simplicity.
Data Source
AI summary
An image sensor IC may have a non-volatile memory for several functions. The functions may include storing control parameters for a camera autofocus module, part tracking data, and data for defect correction or color science. The non-volatile memory can in particular be an antifuse non-volatile memory, which may not need special light shielding.