Anti-fuse Memory Rectifier Integration
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Solution Overview
Problem
Conventional anti-fuse memory devices face challenges in miniaturization due to the need for separate switch transistors and control circuits, which complicates their configuration and reduces integration density.
Innovation Solution
The integration of a rectifier element between the memory gate electrode and the word line in the anti-fuse memory device allows direct voltage application from the word line to the memory gate electrode, eliminating the need for a separate switch transistor and control circuit, thereby enabling miniaturization by simplifying the circuit configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate switch transistor and control circuit are used to control voltage application to the memory capacitor, then the memory device can reliably perform programming and reading operations, but the device complexity increases and miniaturization becomes difficult
Solution Approach 1:
The patent combines the switch transistor function directly into the memory capacitor structure by using the memory gate electrode as the switch control terminal. The word line is directly connected to the memory gate electrode, merging the switching control function with the memory storage function into a single integrated structure, thereby eliminating separate control circuits and reducing device complexity while maintaining operational reliability
Solution Approach 2:
The memory gate electrode serves multiple functions: it acts as both the control electrode for forming the memory channel and the switch control terminal for voltage application. This multi-functional design eliminates the need for separate switch transistors and control circuits, reducing device complexity while preserving the ability to reliably perform both programming and reading operations
2Reliability
If a separate switch transistor and control circuit are provided, then voltage control for memory operations is achieved, but the area occupied by the device increases
Solution Approach 1:
The patent merges the voltage control function into the memory capacitor structure itself by using the memory gate electrode as the control terminal. The word line is directly connected to the memory gate electrode, eliminating the need for separate switch transistors and control circuits that would occupy additional area, thereby achieving miniaturization while maintaining voltage control capability
Solution Approach 2:
The patent extracts the switching control function from separate external components and integrates it directly into the memory capacitor structure. The memory gate electrode is repurposed to serve as the switch control terminal, removing the need for separate switch transistors and reducing the overall device area while preserving voltage control functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for miniaturization of the anti-fuse memory device without the need for additional control circuits, enhancing integration density and reducing complexity, while maintaining data programming and reading functionality.
Implementation Method 1
The rectifier element allows application of voltage from the word line to the memory gate electrode. The rectifier element blocks application of voltage from the memory gate electrode to the word line in accordance with a voltage value applied to the memory gate electrode and the word line.
Implementation Method 2
Dielectric breakdown of the memory gate insulating film of the memory capacitor is caused by a voltage difference between a breakdown word voltage and a breakdown bit voltage. Due to the dielectric breakdown of the memory gate insulating film, the memory gate electrode, which has been insulated from the well, is electrically connected the surface of the well
Data Source
Figure 1
Figure 2
Figure 3~4B
AI summary
In an anti-fuse memory (2b) includes a rectifier element (3) of a semiconductor junction structure in which a voltage applied from a memory gate electrode (G) to a word line (WL1) is applied as a reverse bias in accordance with voltage values of the memory gate electrode (G) and the word line (WL1), and does not use a conventional control circuit. Hence, the rectifier element (3) blocks application of a voltage from the memory gate electrode (G) to the word line (WL1). Therefore a conventional switch transistor that selectively applies a voltage to a memory capacitor and a conventional switch control circuit allowing the switch transistor to turn on or off are not necessary. Miniaturization of the anti-fuse memory and a semiconductor memory device are achieved correspondingly.