Anti-fuse OTP Device With Segmented Active Regions
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Solution Overview
Problem
One-time programmable (OTP) semiconductor devices face challenges in data erasure without additional apparatus, limiting their programming capabilities and requiring complex fabrication processes due to the need for precise conductivity type management and gate structure integration.
Innovation Solution
A semiconductor device design featuring a substrate with distinct active regions, writing and reading gate electrodes, and source/drain junction regions of different conductivity types, connected via a connection structure, allowing for efficient data storage and reduced gate leakage current through the use of dummy gate structures and optimized device isolation layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If complex gate structures and multiple components are used to achieve precise conductivity type management, then data storage reliability is improved, but device complexity and fabrication difficulty increase
Solution Approach 1:
The source/drain junction regions serve dual purposes: they function as both the source/drain contacts for the transistor operation and as the conductivity type reference regions for the anti-fuse structure. This merging of functions eliminates the need for separate components, reducing device complexity while maintaining reliable conductivity type management for data storage
Solution Approach 2:
The first active region is designed to serve multiple functions: it acts as the source/drain region for the transistor, provides the conductivity type reference for the anti-fuse, and enables both writing and reading operations. This multi-functionality reduces the overall number of components needed while ensuring reliable data storage through precise conductivity control
2Adaptability or versatility
If multiple gate structures are integrated for writing and reading operations, then functionality is improved, but manufacturing precision requirements increase
Solution Approach 1:
The device is segmented into distinct functional regions: a first active region for writing operations with its associated writing gate electrode, and a second active region for reading operations with its reading gate electrode. This segmentation allows each region to be optimized independently, reducing the overall manufacturing precision requirements compared to a fully integrated structure
Solution Approach 2:
Different conductivity types are assigned to different regions: the first active region has a first conductivity type optimized for writing operations, while the second active region has a second conductivity type optimized for reading operations. This local differentiation allows each region to be manufactured with precision tailored to its specific function, reducing overall manufacturing complexity
3Adaptability or versatility
If conventional OTP device structures are used, then data erasure capability is limited, but fabrication process complexity increases due to additional apparatus requirements
Solution Approach 1:
The anti-fuse structure utilizes the harmful breakdown effect as a beneficial programming mechanism. When a high voltage is applied during writing, the insulation layer intentionally breaks down to create a conductive path, permanently storing data. This converts what would normally be a failure mode into a reliable programming mechanism that works with standard fabrication processes
Solution Approach 2:
The device structure itself provides the means for programming through its inherent anti-fuse mechanism. The insulation layer between the writing gate electrode and the first active region serves as the programmable element, eliminating the need for external programming apparatus. The structure is self-programming through voltage-induced breakdown
Data Source
AI summary
A semiconductor device is disclosed. The semiconductor device including writing and reading gate electrodes respectively on first and second active regions on a substrate, a first gate insulation pattern between the first active region and the writing gate electrode, a second gate insulation pattern between the second active region and the reading gate electrode, first and second source/drain junction regions in the first and second active regions at sides of the writing and reading gate electrodes, and a connection structure that connects the first and second source/drain junction regions. The first active region has the same conductivity type as the source/drain junction regions. The second active region has a different conductivity type from the source/drain junction regions.