Antifuse Structure Using Partially Treated Metal Precursor

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Solution Overview

Problem

Conventional antifuse structures in integrated circuits require high processing temperatures and may not fully evaporate organic materials, leading to residual carbon-containing materials that affect the performance and reliability of the circuit.

Innovation Solution

The antifuse structure incorporates an untreated or partially treated metal precursor at the bottom surface of a contact via, which remains in a high resistive state and becomes conductive upon applying a large programming current, utilizing a metal precursor with an organic carrier material that is only partially treated by an N2/H2 plasma, allowing for a lower processing temperature and improved circuit performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high processing temperature is used to completely evaporate organic material, then the organic material is fully removed, but the processing temperature requirement becomes too high

Engineering Contradiction:

Improvecomplete evaporation of organic materialVSAvoidprocessing temperature

Core Design Contradiction:

ReliabilityVSTemperature

Solution Approach 1:

The patent changes the chemical composition parameters of the metal precursor material to include organic carrier materials that can decompose and evaporate at lower temperatures. This allows the organic material to be completely removed through thermal decomposition at reduced processing temperatures, resolving the contradiction between complete evaporation reliability and temperature requirements

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical/physical evaporation process (which requires high temperature) with a chemical decomposition process. The organic carrier material undergoes thermal decomposition to release the metal precursor, substituting the need for high-temperature physical evaporation with a lower-temperature chemical reaction process

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Reliability

If N2/H2 plasma treatment is applied to break metal-carbon bonds, then residual carbon material is removed, but the metal precursor becomes treated and loses its programmable resistance change capability

Engineering Contradiction:

Improveremoval of residual carbon materialVSAvoidprogrammable resistance change capability

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent extracts the organic carrier material function from the traditional metal precursor structure. The organic carrier is designed to decompose and evaporate completely, taking the carbon-containing material out of the final structure. This eliminates the need for plasma treatment to remove carbon, preserving the metal precursor's programmable resistance change capability

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent converts the potential harm of residual carbon material into a benefit by using organic carrier materials that are designed to completely decompose and evaporate. The organic carrier's decomposition process actually helps remove carbon materials beneficially, eliminating the need for harmful plasma treatment that would damage the metal precursor

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the antifuse structure to maintain a high resistive state until a large programming current is applied, effectively reducing resistance and enhancing circuit conductivity, while avoiding the limitations of high processing temperatures and residual carbon-containing materials.

Implementation Method 1

the metal material and any residual carbon containing material are then treated by an N2/H2 plasma to break a bond of the metal material and the carbon containing material

Methodology Applied

Scientific EffectPlasma: Plasma

Implementation Method 2

hydrogen reacts with the carbon containing material thereby evaporating the residual carbon containing material

Methodology Applied

Scientific EffectEvaporation: Evaporation

Implementation Method 3

When the antifuse is 'fused,' the open circuit becomes closed and conduction across the antifuse becomes possible. Thus, antifuses are used to perform the opposite function of a fuse. Typically an antifuse is fused by applying a sufficient voltage, called a 'fusing voltage' across the antifuse structure. This voltage causes a current to flow and the structure to fuse together

Methodology Applied

Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS8125048B2Antifuse structure for in line circuit modification

Publication Date: 2012.02.28 GLOBALFOUNDRIES US INC

AI summary

An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.