Anti-Fuse Memory Pulse Programming for Accurate Readout
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Solution Overview
Problem
Traditional anti-fuse memory programming methods apply a constant high voltage, leading to overheating and reduced accuracy in reading data due to uneven electrical properties of anti-fuse memory cells, resulting in lower yield and accuracy.
Innovation Solution
Generating a programming pulse signal with an adjustable duty factor based on a row strobe signal, which changes the programming voltage level periodically to prevent overheating and optimize the breakdown of anti-fuse memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a constant high programming voltage is applied to anti-fuse memory cells during the entire programming process, then the anti-fuse memory cells can be broken down and programmed, but the resistance in the low-resistance state remains higher and overheating occurs, reducing reading accuracy
Solution Approach 1:
The patent applies periodic pulsed programming voltage instead of constant high voltage. The programming voltage is applied in repeated pulse cycles with adjustable duty factors, allowing the anti-fuse memory cells to be programmed while preventing overheating and reducing the resistance in the low-resistance state, thereby improving both programming success rate and reading accuracy
Solution Approach 2:
The patent introduces dynamic adjustment of programming voltage parameters including duty factor, pulse width, and amplitude. The programming voltage characteristics are made variable rather than fixed, allowing optimization of the breakdown process to achieve lower resistance states while controlling thermal effects, thus resolving the contradiction between reliable programming and accurate reading
2Productivity
If a high programming voltage is maintained for a period of time to break down anti-fuse memory cells, then programming can be completed, but overheating occurs and damage probability increases
Solution Approach 1:
The patent uses periodic pulsed voltage with adjustable duty factors to program anti-fuse memory cells. By controlling the ratio of pulse-on time to total cycle time, the programming process can be completed efficiently while providing cooling intervals that prevent overheating and reduce cell damage probability
Solution Approach 2:
The patent implements protective measures by using pulsed voltage with built-in cooling periods before complete breakdown occurs. This preemptive approach cushions against thermal accumulation and prevents damage before it happens, maintaining both programming speed and cell reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the probability of damage to anti-fuse memory cells, lowers their resistance in a low-resistance state, and improves the success rate and accuracy of reading data, thereby enhancing the yield and reliability of the anti-fuse memory.
Implementation Method 1
A gate oxide dielectric of an anti-fuse memory cell may be broken down after a high voltage is applied, and an impedance of a path broken down will decrease
Data Source
AI summary
Embodiments of the present disclosure relate to the field of semiconductor technology, and provide an anti-fuse memory and a control method thereof. The anti-fuse memory is configured to generate a programming pulse signal based on a row strobe signal, a word line of the anti-fuse memory array is configured to receive the row strobe signal, and the anti-fuse memory array is programmed in response to the programming pulse signal. The embodiments of the present disclosure are at least advantageous to improving accuracy of reading data from the anti-fuse memory array and improving yield of the anti-fuse memory.