Antifuse Storage Write Time Optimization

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Solution Overview

Problem

In storage devices with nonvolatile memories using antifuses, the write time is prolonged due to manufacturing variations and environmental temperature changes, leading to decreased usability.

Innovation Solution

A storage device with a memory unit containing an antifuse element, including a write condition storage area and a control unit that applies a write voltage in the form of pulses with a constant cycle to control the write operation, thereby optimizing write conditions without prolonging write time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If write operation and read operation are performed in one cycle to control write time and voltage, then write conditions can be adjusted to absorb variations, but write time is prolonged

Engineering Contradiction:
Improvewrite condition controlVSAvoidwrite time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies preliminary action by performing write condition determination before the actual write operation. The control unit determines the appropriate write conditions (voltage and time) in advance based on read operations performed beforehand, storing these conditions for subsequent use. This eliminates the need to perform write-read cycles during the actual writing process, thereby reducing write time while maintaining reliable write condition control.

Inventive Principle:
Principle #10Preliminary action

2Ease of operation

If constant cycle pulse voltage is applied to antifuse element, then write operation can be controlled, but manufacturing variations and temperature changes cause variations in required pulses and voltage

Engineering Contradiction:
Improvewrite operation controlVSAvoidadaptation to variations
Core Design Contradiction:
Ease of operationVSAdaptability or versatility

Solution Approach 1:

The patent implements feedback by performing read operations to detect the state of the antifuse element and using this information to adjust write conditions. The control unit reads the state of the antifuse, compares it with expected values, and modifies the write voltage and time accordingly. This feedback mechanism enables the system to adapt to manufacturing variations and temperature changes while maintaining ease of operation through automated control.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent applies parameter changes by dynamically adjusting write voltage and write time based on detected conditions. The control unit modifies these parameters in response to read operation results and environmental factors. This allows the system to maintain optimal write conditions despite variations in antifuse characteristics and operating temperature, balancing ease of operation with adaptability.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution ensures that write time is not prolonged, maintaining the usability of the storage device by optimizing the write conditions through controlled voltage pulses and stored write conditions.

Implementation Method 1

the control unit applying a write voltage in a form of pulses having a constant cycle to the antifuse element in the write operation

Methodology Applied
Scientific EffectPulsed voltage application:

Data Source

PatentUS20250182838A1Storage device
Publication Date: 2025.06.05 CANON KK
  • US20250182838A1 patent drawing
  • US20250182838A1 patent drawing
  • US20250182838A1 patent drawing

AI summary

There is used a storage device including: a memory unit configured by an antifuse element, the memory unit including a write condition storage area that stores a write condition and a write area in which information is written; and a control unit configured to perform a write operation and a read operation on the memory unit by controlling a voltage applied to the antifuse element, the control unit applying a write voltage in a form of pulses having a constant cycle to the antifuse element in the write operation, wherein the control unit controls the write condition by referring to the write condition storage area in the write operation.