Anti-fuse Circuit Switching Unit for Read Operation Reliability

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Solution Overview

Problem

Anti-fuse circuits in semiconductor devices face the issue of anti-breakdown phenomenon during repeated read operations, leading to changes in resistance and potential errors due to electrical stress, which affects the reliability and accuracy of stored information.

Innovation Solution

Incorporating a switching unit that prevents current flow through the anti-fuse during read operations by controlling the program and read voltages, reducing the current through the anti-fuse and thereby minimizing the risk of anti-breakdown and maintaining the programmed state.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a switching unit is added to prevent current flow through the anti-fuse during read operations, then the reliability of the anti-fuse circuit is improved by preventing anti-breakdown phenomenon, but the device complexity increases due to additional components

Engineering Contradiction:
Improveanti-fuse circuit reliabilityVSAvoidcircuit structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A switching unit is introduced as an intermediary component between the read controller and the anti-fuse. This switching unit acts as a mediator that controls current flow, preventing direct current from reaching the anti-fuse during read operations. The switching unit includes control logic that responds to read enable signals, opening the circuit path to the anti-fuse when read operations are detected, thereby preventing anti-breakdown phenomenon while maintaining circuit functionality.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the switching unit controls current flow by responding to read enable signals, then the anti-breakdown phenomenon is prevented, but the ease of operation decreases due to additional control logic requirements

Engineering Contradiction:
Improveprogrammed state stabilityVSAvoidread operation simplicity
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The control logic of the switching unit is merged with the existing read controller circuitry. The switching unit shares control signals and logic with the read controller, allowing both functions to be coordinated through a unified control mechanism. This integration ensures that when read operations are initiated (indicated by read enable signals), the switching unit automatically responds by blocking current to the anti-fuse, without requiring separate control logic or additional operational complexity from the user.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the reliability of the anti-fuse circuit by preventing resistance changes during read operations, ensuring consistent programming and reducing errors in semiconductor devices.

Implementation Method 1

a program operation in which a program voltage is applied to the anti-fuse to break down a gate oxide

Methodology Applied
Scientific EffectBreakdown phenomenon of gate oxide: Avalanche Breakdown

Implementation Method 2

a switching unit configured to form a path that prevents a current flowing through the anti-fuse from being applied to the read controller during a program operation and that substantially reduces an amount of a current flowing through the anti-fuse during a read operation

Methodology Applied
Scientific EffectElectrical conduction control: Conduction (electrical)

Data Source

PatentUS8472234B2Anti-fuse circuit and integrated circuit including the same
Publication Date: 2013.06.25 SK HYNIX INC
  • US8472234B2 patent drawing
  • US8472234B2 patent drawing
  • US8472234B2 patent drawing

AI summary

An anti-fuse circuit and an integrated circuit (IC) including the same are disclosed, which are applied to a technology for use in all kinds of semiconductor devices or system ICs, each of which includes an anti-fuse circuit using the breakdown phenomenon of a gate oxide, so as to prevent the occurrence of an anti-breakdown phenomenon. The anti-fuse circuit includes an anti-fuse, a breakdown of which occurs by a program voltage, configured to be electrically short-circuited, a read controller configured to be controlled by a read voltage received through the anti-fuse so as to output a short-circuiting status of the anti-fuse, and a switching unit configured to form a path that prevents a current flowing through the anti-fuse from being applied to the read controller during a program operation and prevents a current from flowing in the anti-fuse during a read operation.