Antimony-Comprising Phase Change Material Deposition at Low Substrate Temperatures
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Solution Overview
Problem
Existing methods for depositing phase change materials, such as GeSbTe alloys, require high substrate temperatures (above 400°C) for adequate deposition, which can be incompatible with certain substrates or result in incomplete or slow deposition at lower temperatures.
Innovation Solution
The method involves using vaporized Sb(OR)3 and a reducing agent, with Sb(OR)3 being provided to the substrate at temperatures no greater than 450°C, and optionally combining chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques to form an antimony-comprising phase change material with minimal oxygen content, allowing for the incorporation of additional metals like Ge and Te.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical vapor deposition is used with traditional antimony precursors, then adequate deposition of phase change material is achieved, but substrate temperature must be maintained above 400°C which may damage substrate features or be incompatible with other precursors
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using alternative antimony precursors (such as Sb(CH3)3, Sb(C2H5)3, or Sb(OC2H5)3) that have different thermal stability characteristics compared to traditional precursors. This parameter change allows the deposition to proceed at lower substrate temperatures (below 400°C) while still achieving adequate deposition quality and phase change material formation.
Solution Approach 2:
The patent employs composite deposition processes that combine chemical vapor deposition with plasma enhancement or other auxiliary techniques. This composite approach allows the use of lower-temperature precursors while maintaining deposition effectiveness, effectively decoupling the temperature requirement from the deposition quality requirement.
2Reliability
If substrate temperature is reduced below 400°C to protect substrate features, then substrate compatibility is improved, but deposition rate becomes unacceptably slow or deposition is incomplete
Solution Approach 1:
The patent modifies the chemical composition and volatility parameters of the antimony precursor to enable low-temperature deposition. Precursors such as trimethylantimony or triethylantimony are selected based on their optimal vapor pressure and reactivity at lower temperatures, allowing adequate deposition rates to be achieved below 400°C without compromising substrate compatibility.
Solution Approach 2:
The patent may employ periodic or pulsed deposition sequences where precursor exposure, purging, and deposition steps are cycled. This periodic action allows for controlled material accumulation at lower temperatures, maintaining deposition rate by optimizing the timing and duration of each cycle rather than relying solely on continuous high-temperature processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the deposition of phase change materials at lower temperatures, ensuring reliable and efficient formation of antimony-comprising phase change materials with minimal oxygen, suitable for use in smaller, denser integrated circuitry and rewritable media.
Implementation Method 1
chemical vapor deposition is one method by which such phase change materials may be deposited over a substrate
Implementation Method 2
providing a reducing agent and vaporized Sb(OR)3 to a substrate
Implementation Method 3
providing a reducing agent and vaporized Sb(OR)3 to a substrate, and forming there-from antimony-comprising phase change material on the substrate
Data Source
AI summary
A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.