Antimony Underlayer Deposition for Low-Temperature EUV Lithography
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Solution Overview
Problem
The wider adoption of antimony containing films in semiconductor device structures and integrated circuits is limited due to challenges in depositing films with controlled composition, insufficient deposition rate, and poor deposition quality at low temperatures.
Innovation Solution
The method involves plasma enhanced atomic layer deposition (PEALD) processes using alkylamine antimony precursors and reactive species from gases like argon, hydrogen, and helium to form antimony containing films with controlled composition and quality, allowing deposition at low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used for antimony containing films, then deposition rate may be sufficient, but manufacturing precision of film composition deteriorates
Solution Approach 1:
The deposition process is segmented into distinct sequential steps: precursor exposure phase followed by plasma treatment phase. This segmentation allows independent optimization of each phase - the precursor phase controls composition while the plasma phase enhances deposition rate and quality, resolving the contradiction between precision and productivity.
Solution Approach 2:
The patent employs periodic alternation between precursor exposure and plasma treatment cycles. Each cycle deposits a controlled amount of antimony with precise composition, and the repetitive cycling maintains both manufacturing precision and acceptable overall deposition rate by accumulating film thickness over multiple controlled cycles.
2Temperature
If low temperature deposition is used, then substrate damage is reduced, but deposition quality deteriorates
Solution Approach 1:
The patent changes the physical-chemical parameters of the deposition environment by introducing plasma treatment at low temperatures. The plasma provides reactive species that enable high-quality film formation without requiring high thermal energy, thus maintaining low deposition temperature while improving deposition quality through enhanced surface reactivity.
Solution Approach 2:
Plasma acts as an intermediary that mediates between the low temperature condition and the requirement for high deposition quality. The plasma provides the necessary activation energy and reactive species to achieve quality deposition without directly heating the substrate to high temperatures, thus resolving the contradiction.
3Adaptability or versatility
If antimony containing films are deposited for semiconductor applications, then device functionality is enabled, but adoption is limited due to deposition challenges
Solution Approach 1:
The deposition process is designed to be self-regulating through the sequential precursor-plasma cycles. Each cycle automatically limits the deposited amount by the precursor exposure time and stoichiometry, providing self-service control of film composition and thickness without requiring complex real-time monitoring, thus improving ease of manufacture while maintaining versatility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of antimony containing films with precise composition and quality, enhancing their utility in semiconductor applications, particularly as underlayers for EUV patterning, reducing the EUV dose required and improving sensitivity of EUV responsive layers.
Implementation Method 1
depositing an antimony containing film on the substrate by performing one or more unit deposition cycles of a plasma enhanced atomic layer deposition (PEALD) process
Implementation Method 2
contacting the substrate with one or more reactive species generated from a plasma produced from a gas comprising at least one of, argon (Ar), hydrogen (H2), helium (He), and mixtures thereof
Data Source
AI summary
Systems and methods for forming an antimony containing film on a substrate. Related structures and films are also disclosed. The antimony films are be formed by a plasma enhanced atomic layer deposition process. The antimony films can be utilized as underlayers in EUV lithography processes.