Antireflection Layer for Color Filter Substrate
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Solution Overview
Problem
Current photolithographic processes in liquid crystal display manufacturing face issues such as standing wave, swing, and notching effects due to light reflection at the contact interface between the photoresist and the base, which affect the formation of color resist units and reduce resolution and display performance.
Innovation Solution
A manufacturing method for a color filter substrate that includes forming an antireflection layer with a light-absorbing polymer under the color resist layer, which absorbs ultraviolet light and reduces reflection through destructive interference, thereby eliminating the mentioned effects and improving key dimension consistency and pattern distinguishability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithographic process is used to form color resist units, then color filter substrate can be manufactured, but light reflection at the contact interface between photoresist and base causes standing wave effect, swing effect, and notching effect that reduce manufacturing precision
Solution Approach 1:
An antireflection layer is introduced as an intermediary between the photoresist layer and the base. This intermediate layer has a refractive index between that of the photoresist and the base, reducing light reflection at the interface and eliminating the standing wave effect, swing effect, and notching effect that occur when photoresist is in direct contact with the base.
Solution Approach 2:
The antireflection layer is formed by coating a polymer grafted with light-absorbing groups onto the base. This composite material structure combines the polymer matrix with light-absorbing functional groups to achieve both mechanical adhesion and optical antireflection properties, improving manufacturing precision without adding complex multi-layer structures.
2Manufacturing precision
If COA technology is used to form color resist layer on TFT array substrate, then misalignment issues are avoided and aperture ratio is increased, but light reflection issues become even more significant affecting photolithographic operation
Solution Approach 1:
The antireflection layer serves as a mediator between the TFT array substrate and the photoresist layer in COA technology. By placing this layer on the substrate before coating the photoresist, it effectively reduces the light reflection at the interface during photolithography, solving the reflection issues that are particularly problematic in COA displays while maintaining the alignment accuracy and aperture ratio benefits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The antireflection layer effectively absorbs ultraviolet light, reducing reflection and enhancing the formation of color resist units, leading to improved resolution and display performance in liquid crystal displays.
Implementation Method 1
the light-absorbing group has a light absorption band of 200-400 nm
Implementation Method 2
the standing wave effect, the swing effect, and the notching effect may readily occur in exposure of the photoresist
Data Source
AI summary
A manufacturing method of a color filter substrate includes Step S1: providing a base and forming an antireflection layer on the base; and Step S2: forming a color resist layer on the antireflection layer, in which the color resist layer is formed through a photolithographic process including operations of coating photoresist, exposure, and development. With the arrangement of the antireflection layer under the color resist layer, in a photolithographic process of the color resist layer, due to the arrangement of the antireflection layer under the photoresist, during exposure of the photoresist, the antireflection layer absorbs ultraviolet light incident into the antireflection layer and weakens, through destructive interference, reflection light emitting from the contact interface between the photoresist and the antireflection layer to eliminate the standing wave effect, the swing effect, and the notching effect of photolithography and improve key dimension consistency and pattern distinguishability of the color resist units.