Antireflective Hardmask Polymer for Lithography Etch Selectivity
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Solution Overview
Problem
Existing antireflective coating materials in lithographic processes often exhibit poor etch selectivity when used between imaging and target material layers of similar composition, leading to consumption of the imaging layer during etching, necessitating the use of a hardmask with antireflective properties.
Innovation Solution
Development of aromatic ring-containing polymers with high carbon content, such as bis(phenyl)fluorene, naphthalene, and pyrene-backbone polymers, integrated into a hardmask composition that includes an organic solvent, initiator, and crosslinker, providing antireflective properties and enhanced etch resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If antireflective coating materials are used between imaging and target material layers, then reflectivity is reduced, but etch selectivity deteriorates causing imaging layer consumption during etching
Solution Approach 1:
The patent combines the antireflective coating and hardmask functions into a single integrated layer. The polymer composition provides both antireflective properties (reducing reflectivity between imaging and target material layers) and hardmask functionality (resisting etching to protect the imaging layer), eliminating the need for separate layers and resolving the etch selectivity problem.
Solution Approach 2:
The invention uses a composite polymer material containing aromatic rings (such as fluorene, naphthalene, or pyrene groups) combined with specific side chain structures. This composite structure provides both the optical properties needed for antireflective performance and the chemical resistance required for etch selectivity, achieving dual functionality through material composition design.
2Reliability
If a hardmask is added as an intermediate layer, then etch selectivity is improved, but device complexity increases
Solution Approach 1:
The patent merges the hardmask layer and antireflective coating into a single functional layer. This polymer-based hardmask simultaneously provides etch resistance (protecting the imaging layer during etching) and antireflective properties (reducing optical interference), thereby simplifying the overall layer structure while maintaining etch selectivity.
3Reliability
If polymer with high carbon content and aromatic rings is used, then etch resistance is improved, but manufacturing complexity increases
Solution Approach 1:
The patent modifies polymer parameters by incorporating specific aromatic ring structures (fluorene, naphthalene, or pyrene) with high carbon content into the polymer backbone. These structural changes enhance etch resistance while the polymers remain processable using standard lithographic techniques, balancing performance improvement with manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer-based hardmask composition achieves improved etch selectivity and chemical resistance, reducing reflectivity and enabling precise pattern transfer with anisotropic profiles, suitable for use in deep UV lithography.
Implementation Method 1
a polymer having antireflective properties and high carbon content... bis(phenyl)fluorene-backbone polymer... naphthalene-backbone polymer... pyrene-backbone polymer
Data Source
AI summary
An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.