Anti-Series MOSFET Control Circuit Single Signal Drive
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Solution Overview
Problem
Semiconductor integrated circuits using MOSFETs as switching elements face challenges in managing high power supply due to reverse current through body diodes, requiring increased circuit complexity and pin count, especially when driving drain-common MOSFETs with separate control signals for each gate terminal.
Innovation Solution
A semiconductor integrated circuit configuration that employs two N-channel MOSFETs connected in anti-series, with a driving circuit and control circuit driven by a single control signal, reducing the number of input terminals needed and maintaining efficient power supply while preventing reverse current flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a drain-common MOSFET is used to handle high power and prevent reverse current, then power handling capability and reverse current prevention are improved, but the number of input terminals increases to two, which increases circuit scale
Solution Approach 1:
The patent merges the control of two MOSFETs into a single control terminal by using a control signal that simultaneously gates both transistors. The control circuit generates a single control signal that is applied to both the first and second control terminals, thereby combining what would otherwise require two separate control inputs into one unified control mechanism.
Solution Approach 2:
The single control terminal serves multiple functions by controlling both MOSFETs in the anti-series configuration. This universal control approach allows one terminal to perform the role of what would traditionally require two separate control terminals, reducing the overall terminal count while maintaining full control capability over both switching elements.
2Ease of operation
If separate control signals are provided to two gate terminals for drain-common MOSFETs, then precise control of each MOSFET is achieved, but the number of input terminals increases, requiring larger physical package size and substrate space
Solution Approach 1:
The control functions of two separate gate terminals are merged into a single control terminal. The control circuit generates one control signal that is distributed to both MOSFET control terminals, thereby combining the control interface into a single point of entry that reduces the physical footprint while maintaining control precision.
3Adaptability or versatility
If two input terminals are provided for controlling two gate terminals, then independent control of each MOSFET is enabled, but the circuit scale and manufacturing complexity increase
Solution Approach 1:
The patent combines two separate control inputs into a single control terminal that provides control signals to both MOSFETs. This merging simplifies the manufacturing process by reducing the number of external connections required, while the internal control circuit maintains the capability to independently manage both switching elements through coordinated control signal generation.
Data Source
AI summary
According to the present embodiment, a semiconductor integrated circuit is a semiconductor integrated circuit that drives a switching element including a first field-effect transistor and a second field-effect transistor connected to the first field-effect transistor in anti-series, and includes a driving circuit and a control circuit. The driving circuit turns on or off the first and second field-effect transistors. The control circuit controls the driving circuit in accordance with a control signal input from one signal input terminal.