Avalanche Photodiode Pixel Layout for Low-Noise Quenching

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

In photoelectric conversion devices using avalanche photodiodes, the proximity of quenching resistive elements to the APD leads to variations in electrostatic potential, causing noise and local electric field concentration, especially in minute pixel configurations.

Innovation Solution

The resistive element is positioned farther away from the semiconductor layer surface compared to the wiring structure, preventing electrostatic interference and reducing noise by maintaining a consistent electric field distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If the resistive element is disposed near the avalanche photodiode on the semiconductor layer surface, then the device complexity is reduced and integration is improved, but noise increases due to electrostatic potential variations and local electric field concentration

Engineering Contradiction:
Improvedevice integrationVSAvoidnoise
Core Design Contradiction:
Device complexityVSObject-affected harmful factors

Solution Approach 1:

The patent applies dimensional separation by moving the resistive element from the same plane (2D proximity) to a different vertical level (3D separation). Specifically, the resistive element is disposed on an insulating film that is positioned at a different height than the semiconductor layer surface, creating vertical separation while maintaining horizontal proximity. This dimensional transition resolves the contradiction by reducing electrostatic interference (lowering noise) without significantly increasing device footprint or complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If the resistive element is disposed close to the avalanche photodiode, then manufacturing precision requirements are simplified, but measurement precision deteriorates due to electrostatic potential variations

Engineering Contradiction:
Improvealignment toleranceVSAvoidsignal detection accuracy
Core Design Contradiction:
Manufacturing precisionVSMeasurement precision

Solution Approach 1:

The patent introduces an insulating film as an intermediary layer between the semiconductor layer and the resistive element. This intermediary structure serves multiple functions: it electrically isolates the resistive element from the semiconductor layer (reducing noise coupling), provides a platform for disposing the resistive element in proximity without direct contact, and maintains manufacturing simplicity while improving measurement precision by reducing electrostatic interference.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces noise and facilitates the integration of pixels by minimizing electrostatic interference and maintaining a uniform electric field, enhancing the signal-to-noise ratio and reducing timing jitter.

Implementation Method 1

photoelectric conversion device incorporating an avalanche photodiode (APD)

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

avalanche photodiode (APD) to operate in a Geiger mode

Methodology Applied
Scientific EffectAvalanche multiplication: Avalanche Breakdown

Implementation Method 3

a resistive element connected to the avalanche photodiode

Methodology Applied
Scientific EffectElectrical resistance: Electrical Resistance

Data Source

PatentUS20240006456A1Device, system, and moving body
Publication Date: 2024.01.04 CANON KK
  • US20240006456A1 patent drawing
  • US20240006456A1 patent drawing
  • US20240006456A1 patent drawing

AI summary

A device includes a first substrate including a first layer including a first surface and a second surface, and a first wiring structure located on the first layer. The device includes an avalanche photodiode located on the first layer, and a resistive element connected to the avalanche photodiode. The first wiring structure includes a wire to supply a first voltage to the avalanche photodiode. A distance between the resistive element and the first surface of the first layer is greater than a distance between the wire and the first surface of the first layer.