Aqueous Cleaning Composition for Semiconductor Gate Electrode Protection
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Solution Overview
Problem
Conventional cleaning methods for semiconductor devices, such as diluted ammonium peroxide mixtures, fail to effectively remove polymeric etch residue without causing damage to gate electrodes, leading to electrical contact issues.
Innovation Solution
An aqueous cleaning composition comprising an organic alkali, an acid additive, an azole, and water is used to remove polymeric residue without damaging gate electrodes, promoting the formation of ohmic contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diluted ammonium peroxide mixture is used for cleaning, then polymeric etch residue is removed, but gate electrodes are damaged causing electrical contact issues
Solution Approach 1:
The patent changes the chemical parameters of the cleaning solution by using an aqueous organic alkali composition with specific pH range (7-10) and controlled concentrations of cleaning agents, replacing the conventional diluted ammonium peroxide mixture. This parameter change allows effective removal of polymeric etch residue while preventing damage to gate electrodes, thus resolving the contradiction between cleaning effectiveness and electrode integrity.
Solution Approach 2:
The patent introduces an aqueous organic alkali composition as an intermediary cleaning agent that mediates between the need to remove polymeric etch residue and the need to protect gate electrodes. This intermediary solution provides a balanced chemical environment that achieves cleaning without the harmful effects of conventional peroxide-based cleaners.
2Reliability
If conventional cleaning methods are used, then cleaning process is simple, but polymeric residue remains causing electrical contact problems
Solution Approach 1:
The patent modifies the chemical composition parameters by implementing an aqueous organic alkali solution with specific pH (7-10) and controlled concentrations of organic alkali (0.01-50%), acid additive (0.01-5%), and azole (0.01-5%). These parameter changes enable effective removal of polymeric residue while maintaining gate electrode integrity, resolving the contradiction between cleaning effectiveness and electrical contact quality.
Solution Approach 2:
The patent creates a composite cleaning composition that combines multiple chemical components (aqueous organic alkali, acid additive, and azole) to achieve synergistic effects. This composite formulation provides both effective polymeric residue removal and gate electrode protection, overcoming the limitations of single-component conventional cleaners.
3Reliability
If aqueous organic alkali composition is used, then polymeric residue is removed and gate electrodes are protected, but composition formulation becomes complex
Solution Approach 1:
The patent establishes specific parameter ranges for each component (pH 7-10, organic alkali 0.01-50%, acid additive 0.01-5%, azole 0.01-5%) to optimize cleaning performance while controlling complexity. By defining clear parameter boundaries, the patent balances formulation complexity with effective removal of polymeric residue and protection of gate electrodes.
Solution Approach 2:
The patent applies different functional components at optimized concentrations within the same cleaning solution - organic alkali for bulk cleaning, acid additive for targeted residue removal, and azole for metal protection. This local quality approach allows each component to perform its specific function at optimal levels, achieving high reliability without excessive overall complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes polymeric residue, preventing electrical contact problems and ensuring desired electrical characteristics for semiconductor devices.
Implementation Method 1
an aqueous cleaning composition comprises an organic alkali, an acid additive, an azole, and water
Implementation Method 2
an aqueous cleaning composition comprises an organic alkali, an acid additive, an azole, and water
Data Source
AI summary
Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.