Aqueous Cleaning Composition for Semiconductor Residue Removal
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Solution Overview
Problem
Current cleaning compositions for removing plasma etching residues in semiconductor manufacturing are either ineffective or corrosive, failing to completely remove residues without damaging metal or oxide layers, and often harm the environment.
Innovation Solution
Aqueous-based cleaning composition comprising water, hydroxylamine or its salts, a basic organic compound, and an organic acid, with a pH of 7 to 9, specifically designed to remove plasma etching or ashing residues without corroding semiconductor substrates, particularly those with aluminum or copper layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional wet stripping methods using organic solvents and amines are used to remove photoresist films, then the photoresist removal capability is improved, but the effectiveness is insufficient for UV-exposed and plasma-treated photoresist films, and inorganic residual materials from plasma etching cannot be removed
Solution Approach 1:
The invention changes the chemical parameters of the cleaning composition by adjusting pH to specific ranges (7-9 for metal layers, 2-4 for oxide layers) and selecting specific components (hydroxylamine, organic acids, basic organic compounds) to effectively remove different types of residues including UV-exposed photoresist and inorganic etching by-products
Solution Approach 2:
The invention uses composite cleaning compositions containing multiple components working together: hydroxylamine (or salts) combined with organic acids (citric acid, lactic acid, etc.) and basic organic compounds, creating a synergistic effect that removes both organic photoresist and inorganic residues while preventing metal corrosion
2Object-affected harmful factors
If plasma ashing is used to burn photoresist films from substrate surfaces, then the method becomes less susceptible to airborne contamination, but plasma etching by-products are not fully removed and require subsequent cleaning solutions
Solution Approach 1:
The invention optimizes the pH parameter of cleaning solutions to specific ranges (7-9 for post-ashing cleaning of metal layers, 2-4 for oxide layers) and selects specific chemical components to effectively remove plasma etching by-products that remain after plasma ashing, without causing corrosion to metal layers
3Reliability
If commercial cleaning solutions with high pH (above 11) or fluorine compounds are used to dissolve plasma etching residues, then the residue removal effectiveness is improved, but the metallic and oxide layers deposited on the substrate are attacked and corroded
Solution Approach 1:
The invention fundamentally changes the pH parameter from high (above 11) to controlled ranges (7-9 for metal layers, 2-4 for oxide layers), and selects specific organic acids and basic organic compounds that provide sufficient cleaning power without causing corrosion to aluminum, copper, and other metal layers
Solution Approach 2:
The invention converts potentially harmful strong bases or fluorine compounds into beneficial mild cleaning systems using hydroxylamine, organic acids, and basic organic compounds that achieve effective residue removal while protecting metal layers from corrosion
4Object-affected harmful factors
If corrosion inhibitors are added to cleaning compositions to prevent corrosion of metal layers, then the corrosion protection is improved, but the removal of plasma etching residue is inhibited and insoluble films are deposited on the metal substrate surface
Solution Approach 1:
The invention changes the approach to corrosion prevention by using specific organic acids (citric acid, lactic acid, gluconic acid) and basic organic compounds that inherently protect metal layers without forming insoluble films, maintaining pH in optimal ranges (7-9 for metals, 2-4 for oxides) that enable both corrosion protection and effective residue removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes plasma etching and ashing residues while preventing metal corrosion and ensuring environmental safety, maintaining the integrity of semiconductor substrates and manufacturing processes.
Implementation Method 1
a cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate, the composition comprising: (component a) water; (component b) a hydroxylamine and/or a salt thereof; (component c) a basic organic compound; and (component d) an organic acid
Implementation Method 2
the composition having a pH of 7 to 9
Data Source
AI summary
A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.