Area Selective Atomic Layer Deposition via Segmented Gas Zones
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Solution Overview
Problem
Existing atomic layer deposition (ALD) methods lack spatial control and high throughput for area-selective deposition, leading to inefficiencies in gas usage and process steps, particularly in large-scale or high-throughput applications.
Innovation Solution
An atomic layer deposition device with a process gas injection head and conveying system that provides relative movement between the substrate and gas injection head, utilizing multiple deposition and separator spaces to selectively apply precursor and co-reactant gases while minimizing gas intermixing, using a combined separator-inhibitor gas flow to prevent deposition on non-target areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional vacuum-based ALD methods are used for area-selective deposition, then deposition selectivity can be achieved, but long evacuation steps are required and gas usage increases
Solution Approach 1:
The reaction chamber is divided into multiple independently controllable zones (first reaction zone, second reaction zone, third reaction zone) with separate gas injection and evacuation systems. This segmentation allows selective evacuation of specific zones containing unwanted reactions, eliminating the need to evacuate the entire chamber and reducing overall evacuation time while maintaining deposition selectivity.
Solution Approach 2:
Different zones of the reaction chamber are assigned different functions: the first zone handles precursor delivery, the second zone performs the actual deposition reaction, and the third zone manages inhibitor gas delivery and evacuation. Each zone has optimized gas flow rates and pressures tailored to its specific function, improving overall efficiency and reducing unnecessary evacuation steps.
2Manufacturing precision
If conventional ALD methods are used, then deposition control is maintained, but gas usage increases due to multiple evacuation steps
Solution Approach 1:
The chamber is segmented into multiple zones with independent gas management systems. This allows selective gas delivery to specific zones and localized evacuation, preventing gas from being wasted throughout the entire chamber. Gas is only evacuated from zones where reactions occur, significantly reducing overall gas consumption while maintaining precise deposition control.
Solution Approach 2:
The system dynamically adjusts gas flow rates, pressures, and temperatures in different zones based on the specific deposition requirements. By optimizing these parameters locally in each zone, the system achieves precise deposition control while minimizing gas usage through more efficient gas utilization in each regional area.
3Productivity
If high-throughput deposition is implemented, then productivity increases, but spatial control over deposition areas is lost
Solution Approach 1:
The reaction chamber is divided into multiple spatially separated zones with independent gas injection heads and evacuation systems. This segmentation enables simultaneous operations in different zones: while one zone performs deposition, another handles precursor delivery or inhibitor gas delivery. The system maintains spatial control by physically separating reaction zones and controlling gas flow to specific areas, achieving high throughput without sacrificing precision.
Solution Approach 2:
The system adds a temporal dimension to the deposition process by performing multiple deposition cycles simultaneously in different spatial zones. While one zone completes a full deposition cycle, another zone prepares the next cycle, creating overlapping operations that increase throughput. This multi-dimensional approach (space-time separation) maintains spatial control through physical zone separation while achieving high productivity through parallel processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient, high-throughput, and area-selective deposition of target material layers by reducing gas usage and eliminating the need for long evacuation steps, while maintaining precise control over deposition areas.
Implementation Method 1
a conveying system arranged to provide relative movement, including but not limited to linear reciprocation and rotation, between the substrate surface and the process gas injection head in a direction along the substrate surface to form a conveying plane
Implementation Method 2
inhibitor moieties selectively adhering to the non-deposition area
Implementation Method 3
the precursor gas flow for adsorbing precursor moieties to the pre-defined deposition area of the substrate surface
Implementation Method 4
the co-reactant gas flow to allow co-reactant moieties comprised therein to react with adsorbed precursor moieties to form a first layer of target material
Data Source
Figure 1A~1B
Figure 2
Figure 3
AI summary
The present disclosure concerns an atomic layer deposition device for area-selective deposition of a target material layer onto a deposition area of a substrate surface further comprising a non- deposition area. In use the substrate is conveyed along a plurality of deposition and separator spaces including at least two gas separator spaces provided with at least a separator gas inlet and a separator drain for, in use exposing the substrate to a separator gas flow. Wherein at least one of the gas separator spaces forms a combined separator-inhibitor gas flow comprising a separator gas and inhibitor moieties. The inhibitor moieties selectively adhering to the non-deposition area to form an inhibition layer reducing adsorption of precursor moieties. In a preferred embodiment the device includes a back-etching space to increase selectivity of the deposition process.