Area Selective CVD Using Inhibitor Agents for Nanoscale Precision
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As feature sizes in microelectronics shrink towards 10 nm, precise fabrication becomes increasingly difficult due to challenges in controlling the precise deposition and etching steps, necessitating advancements in area selective deposition (ASD) techniques for improved precision and reduced fabrication complexity and cost.
Innovation Solution
The method involves using an inhibitor agent with a substituted or unsubstituted amine group, pyridyl group, carbonyl group, ketone group, or diketone group to selectively form a layer on a substrate by accommodating the agent on a region with different composition, reducing the average acidity of hydroxyl groups and controlling nucleation sites, allowing for selective deposition using precursor gases with ligands like carbonyl or allyl groups.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If blanket film deposition is used for nanoscale fabrication, then coverage is achieved, but manufacturing precision deteriorates due to inability to control deposition on specific regions
Solution Approach 1:
The patent applies local quality by introducing inhibitor agents that selectively adsorb to specific substrate regions (e.g., SiO2 surfaces) to prevent film nucleation only in those areas, while allowing deposition on other regions (e.g., conductive surfaces). This creates spatially varying deposition properties without requiring separate processing steps for each region, thereby improving pattern registry precision while maintaining process simplicity.
Solution Approach 2:
The inhibitor agent serves as an intermediary substance that mediates between the precursor gas and the substrate surface. By introducing this intermediate layer, the patent enables selective area deposition - the inhibitor adsorbs to specific surfaces and prevents precursor decomposition and nucleation, allowing precise spatial control over film formation without complex patterning steps.
2Manufacturing precision
If area selective deposition is implemented to improve precision, then manufacturing precision improves, but process complexity increases due to additional steps
Solution Approach 1:
The patent merges the deposition control function into a single continuous process by introducing inhibitor agents during the deposition itself, rather than requiring separate patterning and masking steps. The inhibitor-coated substrate undergoes deposition in one step, combining surface preparation and selective deposition into a unified process that achieves high selectivity without increasing overall process complexity.
Solution Approach 2:
The patent applies preliminary action by pre-coating the substrate with inhibitor agents before deposition. This preliminary step creates the selective surface chemistry needed for area-selective deposition, allowing the subsequent deposition process to automatically follow the pre-defined pattern without requiring real-time control or additional patterning steps during deposition.
3Productivity
If feature sizes are reduced to 10 nm for higher performance, then device performance improves, but manufacturing precision deteriorates due to increased difficulty in controlling deposition and etching
Solution Approach 1:
The patent applies parameter changes by modifying the surface chemistry parameters of different substrate regions through inhibitor adsorption. By changing the chemical state of surface hydroxyl groups from acidic to neutral/basic via inhibitor binding, the patent creates extreme differences in precursor reactivity between regions, enabling deterministic control of nucleation at the 10 nm scale where conventional geometric control becomes ineffective.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables deterministic control of layer formation, achieving perfect selectivity by preventing nucleation on certain surfaces for extended periods, thus ensuring precise pattern registry and reducing the need for additional patterning and etching steps, enhancing the precision and efficiency of microelectronic device fabrication.
Implementation Method 1
at least a fraction of the inhibitor agent is accommodated by the first region
Implementation Method 2
contacting the receiving surface with a precursor gas, wherein: accommodation of the precursor gas by the receiving surface results in selective formation of the layer on the second region
Data Source
AI summary
Provided herein are methods for forming a layer on a substrate wherein the layer is formed selectively on a first region of the substrate relative to a second region having a composition different than the first region. Methods of the invention include selectively forming a layer using an inhibitor agent capable of reducing the average acidity of a first region of the substrate having a composition characterized by a plurality of hydroxyl groups. Methods of the invention include selectively forming a layer by exposure of the substrate to: (i) an inhibitor agent comprising a substituted or an unsubstituted amine group, a substituted or an unsubstituted pyridyl group, a carbonyl group, or a combination of these, and (ii) a precursor gas comprising one or more ligands selected from the group consisting of a carbonyl group, an allyl group, combination thereof.