Area Selective Nanoscale Thin Film Deposition via Functional Group Lithography
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Solution Overview
Problem
Existing area-selective atomic layer deposition (AS-ALD) techniques suffer from limited flexibility, poor spatial resolution, and low contrast between growth and non-growth regions, making them incompatible with semiconductor fabrication processes.
Innovation Solution
A method involving the deposition of a functionalizing molecule onto a substrate, followed by ionizing radiation to create a patterned functionalization, allowing for precise nanoscale-thin film deposition using either a water vapor or ice layer, enabling high-resolution patterning and flexible control over growth areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing AS-ALD techniques are used, then area-selective deposition can be achieved, but spatial resolution is poor and contrast between growth and non-growth regions is low
Solution Approach 1:
The patent applies local quality by using a resist layer with spatially varying properties - the resist layer is deposited uniformly but then selectively removed or modified in specific patterns to create localized growth regions. This allows precise control over where deposition occurs, achieving high spatial resolution and high contrast between growth and non-growth regions simultaneously.
Solution Approach 2:
The patent employs preliminary action by first depositing a resist layer across the entire substrate before performing any deposition. The resist layer is then selectively removed or patterned in advance to define the exact areas where material will be deposited. This preliminary patterning of the resist layer enables precise control over the subsequent deposition process, achieving high spatial resolution and contrast.
2Adaptability or versatility
If existing AS-ALD techniques are used, then deposition can be performed, but flexibility and compatibility with semiconductor fabrication processes are limited
Solution Approach 1:
The patent applies universality by designing a resist layer deposition process that can be integrated with existing semiconductor fabrication steps. The resist layer can be formed using standard deposition techniques, and its selective removal or patterning can be achieved through conventional lithography or etching processes. This multi-functional approach allows the same basic process to achieve area-selective deposition while being compatible with existing semiconductor manufacturing workflows.
Solution Approach 2:
The patent uses an intermediary resist layer that mediates between the deposition process and the substrate. This resist layer can be selectively removed or modified using standard semiconductor fabrication techniques, and its presence or absence controls where material deposits. The resist layer acts as a compatible intermediary that bridges existing fabrication processes with the area-selective deposition requirement, enabling flexibility and integration.
3Manufacturing precision
If a resist layer is deposited and selectively removed to create patterns, then high spatial resolution and contrast are achieved, but process complexity increases
Solution Approach 1:
The patent applies merging by combining the resist layer deposition step with subsequent selective removal or patterning steps into an integrated process flow. The resist layer is deposited, then selectively removed or modified in the same or subsequent steps to create the desired pattern. This merging of operations reduces the number of separate process steps compared to using separate resist and deposition processes, thereby reducing overall process complexity while maintaining high spatial resolution and contrast.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves high spatial resolution and contrast between growth and non-growth regions, enabling precise nanoscale-thin film deposition compatible with semiconductor processes, with patterning resolution approaching the limits of scanning electron microscopy.
Implementation Method 1
the source of ionizing radiation dissociates the functionalizing molecule through radiolysis, and the reaction products of the radiolysis functionalize the substrate
Implementation Method 2
functionalizing the first surface of the substrate by focusing a source of ionizing radiation onto the layer of the functionalizing molecule
Data Source
AI summary
A method of depositing a nanoscale-thin film onto a substrate is disclosed. The method generally comprises depositing a layer of a solid or gaseous state functionalizing molecule onto or adjacent to the first surface of the substrate and exposing the first surface to a source of ionizing radiation, thereby functionalizing the first surface of the substrate. Once the layer of functionalizing molecule is removed, a nanoscale-thin film is then deposited onto the functionalized first surface of the substrate.