Resist Composition for ArF Lithography MEF Improvement
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Solution Overview
Problem
Conventional resist compositions used in photolithographic techniques for semiconductor microfabrication with ArF excimer laser exposure fail to consistently meet the mask error factor (MEF) requirements, resulting in suboptimal resist patterns with defects.
Innovation Solution
A resist composition comprising a resin with specific structural units represented by formulas (aa), (a1-1), and (a1-2), combined with an acid generator, which becomes soluble in aqueous alkali solutions upon acid action, is applied to the substrate, exposed, heated, and developed to produce a resist pattern with improved MEF and reduced defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist composition containing resin with polymer obtained by polymerizing compounds (u-A), (u-B), (u-C), and (u-D) is used, then the resist composition can be manufactured with existing processes, but the mask error factor (MEF) of the obtained resist pattern cannot be satisfied
Solution Approach 1:
The patent changes the chemical structure parameters of the resin by introducing specific structural units (aa), (a1-1), and (a1-2) with defined molecular formulas. These parameter changes in the resin structure improve the MEF of the resist pattern while maintaining compatibility with existing manufacturing processes
Solution Approach 2:
The patent creates a composite resist composition by combining multiple resins with specific structural units, an acid generator, and a solvent. This composite formulation achieves satisfactory MEF by synergistically combining the properties of different components while using conventional manufacturing approaches
2Reliability
If conventional resist composition is used, then the resist composition can be applied with standard photolithographic processes, but the obtained resist pattern contains defects
Solution Approach 1:
The patent applies local quality by introducing specific structural units (aa), (a1-1), and (a1-2) at targeted positions within the resin molecule. These localized structural modifications improve the reliability of the resist pattern by reducing defects in critical areas while maintaining overall resin functionality
Solution Approach 2:
The patent modifies specific parameters of the resin structure, including the types of structural units and their proportions, to eliminate pattern defects. These parameter changes improve resist pattern reliability without requiring complex new manufacturing processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed resist composition effectively produces resist patterns with excellent mask error factor (MEF) and minimal defects, enhancing the quality and reliability of semiconductor microfabrication processes.
Implementation Method 1
a resin which does not have the structural unit represented by the formula (aa) and which is insoluble or poorly soluble in an aqueous alkali solution, but becomes soluble in any aqueous alkali solution by the action of acid
Implementation Method 2
which is insoluble or poorly soluble in an aqueous alkali solution, but becomes soluble in any aqueous alkali solution by the action of acid
Data Source
AI summary
A resist composition contains; (A1) a resin having a structural unit represented by the formula (aa) and at least one structural unit selected from the group consisting of a structural unit represented by the formula (a1-1) and a structural unit represented by the formula (a1-2); (A2) a resin which does not have the structural unit represented by the formula (aa) and which is insoluble or poorly soluble in aqueous alkali solution, but becomes soluble in aqueous alkali solution by the action of acid; and (B) an acid generator,wherein Raa1, Aaa1, Raa2, La1, La2, Ra4, Ra5, Ra6, Ra7, m1, n1 and n1′ are defined in the specification.