Argon Plasma Indirect Activation for Metal-Infiltrated Etch Masks

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Solution Overview

Problem

Existing methods using organic films as etching masks suffer from low etching resistance due to insufficient infiltration of metal gases, leading to contamination and degradation of the vacuum chamber during plasma-enhanced chemical vapor deposition and atomic layer deposition processes.

Innovation Solution

A method involving the indirect activation of a metal gas by generating plasma discharge of an argon gas, allowing the metal gas to infiltrate into the organic film pattern, thereby enhancing etching resistance without decomposing the metal gas and contaminating the chamber.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If metal gas is introduced directly into the organic film, then etching resistance should be enhanced, but the metal gas decomposes and contaminates the vacuum chamber

Engineering Contradiction:

Improveetching resistanceVSAvoidchamber contamination

Core Design Contradiction:

StrengthVSObject-generated harmful factors

Solution Approach 1:

The patent introduces argon gas as an intermediary medium that generates plasma discharge to activate metal gas molecules indirectly. The argon plasma creates reactive species that facilitate metal gas infiltration into the organic film without requiring direct decomposition of the metal gas, thereby preventing chamber contamination while achieving enhanced etching resistance.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the physical state and reactivity parameters of the metal gas by using plasma discharge from argon gas to activate it. This transformation allows the metal gas to infiltrate the organic film in an activated state without decomposing, resolving the contradiction between achieving sufficient infiltration for etching resistance and preventing decomposition that causes contamination.

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If plasma discharge is applied directly to metal gas, then infiltration into organic film is improved, but the metal gas decomposes

Engineering Contradiction:

Improvemetal content in organic filmVSAvoidmetal gas stability

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The patent uses argon gas as a mediator that undergoes plasma discharge to generate activated species. These argon-derived reactive species then transfer energy to the metal gas molecules, enabling their infiltration into the organic film while the metal gas itself remains stable and does not decompose, thus maintaining both infiltration quantity and gas stability.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies preliminary plasma discharge to argon gas before introducing or simultaneously with metal gas introduction. This preliminary activation of the environment creates favorable conditions for metal gas infiltration without subjecting the metal gas directly to decomposing plasma conditions, thereby preserving metal gas stability while achieving sufficient infiltration.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively increases the metal content in the organic film, enhancing its etching resistance and preventing removal during etching processes, while maintaining a clean vacuum environment.

Implementation Method 1

generating plasma discharge of a first gas in the chamber

Methodology Applied

Scientific EffectPlasma discharge: Plasma

Implementation Method 2

indirect activation of a metal gas by generating plasma discharge of an argon gas

Methodology Applied

Scientific EffectIndirect activation:

Implementation Method 3

allowing the metal gas to infiltrate into the organic film pattern

Methodology Applied

Scientific EffectGas infiltration: Diffusion

Data Source

PatentUS11217431B2Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Publication Date: 2022.01.04 KIOXIA CORP

AI summary

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.