Aromatic Hard Mask Composition for Semiconductor Pattern Transfer
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Solution Overview
Problem
Current lithography techniques face challenges in reducing pattern size in microelectronics and microscopic structures due to limitations in effective pattern transfer and mask fabrication, particularly in achieving high etching selectivity and optical properties for ultrathin film resist layers.
Innovation Solution
A hard mask composition comprising an aromatic ring-containing compound and a solvent, applied through a spin-on-coating process, which forms a hard mask layer that enhances etching selectivity and optical properties, allowing for improved pattern transfer and resistance against etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography techniques are used, then existing pattern fabrication processes can be maintained, but pattern size reduction and etching selectivity are limited
Solution Approach 1:
The patent changes the chemical composition parameters of the hard mask layer by using aromatic ring-containing compounds with specific molecular weights (300-4000) and functional groups. This chemical parameter change enables both smaller pattern sizes and maintained etching selectivity, resolving the contradiction between pattern reduction and etching reliability
Solution Approach 2:
The patent creates a composite hard mask material combining aromatic ring-containing compounds with specific solvents (PGMEA, cyclohexanone, ethyl lactate). This composite material provides both the optical properties needed for pattern formation and the chemical resistance needed for etching selectivity, simultaneously addressing both requirements
2Measurement precision
If ultrathin film resist layers are used, then pattern resolution is improved, but optical properties and etching resistance deteriorate
Solution Approach 1:
The patent introduces an aromatic ring-containing hard mask layer as an intermediary between the ultrathin resist layer and the underlying material. This intermediate layer has thickness of 1-20 nm and provides both optical contrast for pattern resolution and chemical resistance for etching protection, allowing ultrathin resist to achieve high resolution without sacrificing etching capability
Solution Approach 2:
The patent applies different material properties to different layers: the ultrathin resist layer provides pattern definition with high resolution, while the aromatic hard mask layer provides etching resistance. This local differentiation of material quality allows each layer to optimize its specific function, achieving both high resolution and etching resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hard mask composition achieves high etching selectivity and improved optical properties, enabling precise pattern formation and minimizing reflectivity issues, thus facilitating the creation of semiconductor integrated circuit devices with complex patterns.
Implementation Method 1
The A may absorb light of a predetermined wavelength region, and the light of the predetermined wavelength region may be light of a short wavelength region, e.g., about 193 nm and/or about 243 nm
Implementation Method 2
forming a hard mask layer that includes an aromatic ring-containing compound represented by the following Chemical Formula 1 on the material layer
Data Source
AI summary
A hard mask composition includes a solvent and an aromatic ring-containing compound represented by the following Chemical Formula 1: