Aromatic Hard Mask Composition for Semiconductor Etching
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Solution Overview
Problem
In lithography processes, the resist layer often fails to provide sufficient resistance for transferring patterns onto underlying material layers, especially when dealing with ultrathin film resist layers, thick etched layers, or specific etchants, leading to inadequate pattern transfer during the etching process.
Innovation Solution
A hard mask composition is developed, comprising a solvent and an aromatic ring-containing compound with specific molecular structures, which forms a hard mask layer that can withstand etching processes and facilitate effective pattern transfer by using a spin-on-coating process and additional layers like silicon-containing auxiliary layers and bottom antireflective coatings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a resist layer is used for pattern transfer, then the pattern can be formed on the substrate, but the resist layer does not provide sufficient resistance during the etching process
Solution Approach 1:
The patent introduces a hard mask layer as an intermediary between the resist layer and the material layer to be etched. This hard mask layer comprises a solvent and an aromatic ring-containing compound, providing the necessary etch resistance that the resist layer alone cannot provide, while still allowing the resist layer to perform its pattern formation function.
Solution Approach 2:
The hard mask layer is formed as a composite material system consisting of a solvent and an aromatic ring-containing compound. This composite structure provides both the mechanical properties needed for pattern support and the chemical resistance required to withstand the etching process, resolving the contradiction between etch resistance and layer thickness constraints.
2Reliability
If a hard mask layer is added between the resist layer and material layer, then etch resistance is improved, but the device structure becomes more complex
Solution Approach 1:
The hard mask layer is designed to perform multiple functions: it provides etch resistance during the etching process, serves as a structural support for the resist layer, and enables precise pattern transfer to the material layer. By consolidating these functions into a single layer, the patent reduces the need for additional separate layers while maintaining high pattern transfer fidelity.
3Length of stationary object
If the etching depth is increased to pattern thick layers, then the pattern transfer capability is improved, but the resist layer becomes insufficient as a mask
Solution Approach 1:
For thick layer etching, the patent introduces the hard mask layer as a mediator between the resist layer and the thick material layer. This intermediary layer provides the necessary resistance to maintain pattern integrity throughout the deep etching process, enabling successful pattern transfer to thick layers that would be impossible with a resist layer alone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hard mask composition ensures high etch selectivity, resistance against etching processes, and improved optical properties, resulting in precise pattern formation with excellent gap-fill and planarization characteristics, suitable for semiconductor integrated circuit devices.
Implementation Method 1
a hard mask layer may be used as an intermediate layer between the resist layer and the material layer to be patterned through transfer from the patterned resist. The hard mask layer may accommodate the pattern from the patterned resist layer and may be resistant against an etching process
Implementation Method 2
which forms a hard mask layer that can withstand etching processes and facilitate effective pattern transfer by using a spin-on-coating process
Data Source
AI summary
A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and an aromatic ring-containing compound, the aromatic ring-containing compound including at least one of a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2: