Aromatic Hardmask Composition for Lithography Pattern Stability
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Solution Overview
Problem
Current lithographic techniques face challenges in forming ultra-fine patterns of several nanometers in size due to limitations in hardmask materials, particularly in maintaining pattern integrity and etching performance during high-temperature processes, which leads to wiggling and thermal contraction issues.
Innovation Solution
A hardmask composition comprising a polymer with specific aromatic moieties and a solvent, applied via spin-on coating, which forms a hardmask layer that improves etching performance and planarization by reducing oxidizable sites and thermal contraction, and is heat-treated to enhance pattern stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional hardmask materials are used in ultra-fine lithography, then the lithographic process can be performed, but pattern integrity deteriorates due to wiggling and thermal contraction at high temperatures
Solution Approach 1:
The patent modifies the chemical composition parameters of the hardmask material by incorporating specific aromatic ring structures (naphthalene, phenyl, biphenyl, pyrene, binaphthalene, or anthracene groups) and controlling the weight average molecular weight (1,000-200,000) and polymer content (0.1-30 wt%), thereby changing the material's thermal properties to resist thermal contraction and maintain pattern integrity at high temperatures
Solution Approach 2:
The patent creates a composite hardmask material system combining specifically designed polymers with aromatic moieties and solvents, where the polymer structure includes repeating units with aromatic ring groups that provide thermal stability while maintaining etching performance, effectively compositeing structural stability with functional reactivity
2Manufacturing precision
If conventional hardmask materials are used, then etching can be performed, but etching performance deteriorates due to oxidation at high temperatures
Solution Approach 1:
The aromatic ring structures in the polymer (naphthalene, phenyl, biphenyl, pyrene, binaphthalene, or anthracene groups) create a chemically inert environment within the hardmask layer that resists oxidation during high-temperature etching processes, protecting the material from harmful oxidative degradation while maintaining etching performance
Solution Approach 2:
The patent changes the chemical composition parameters by incorporating aromatic ring structures and controlling the polymer's weight average molecular weight (1,000-200,000) and content (0.1-30 wt%), thereby modifying the material's resistance to oxidation while preserving its etching capabilities
3Ease of manufacture
If spin-on coating is used to apply hardmask composition, then application simplicity is improved, but coating uniformity may worsen
Solution Approach 1:
The patent optimizes the physical parameters of the hardmask composition including the weight average molecular weight of the polymer (1,000-200,000) and the polymer content (0.1-30 wt%), along with selecting appropriate solvents, to achieve optimal viscosity and flow characteristics that enable uniform spin-on coating while maintaining ease of application
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition effectively prevents pattern collapse at low temperatures and maintains etching performance at high temperatures, resulting in improved pattern fidelity and reduced wiggling, while also providing enhanced planarization and etch resistance.
Implementation Method 1
heat-treating the hardmask composition to form a hardmask layer
Implementation Method 2
maintaining etching performance at high temperatures, resulting in improved pattern fidelity and reduced wiggling
Implementation Method 3
improves etching performance and planarization by reducing oxidizable sites
Data Source
AI summary
A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.In the Chemical Formula 1,A, B, R1 and R2 are the same as defined in the detailed description.