Aromatic Monomer Hardmask for Ultra-Fine Semiconductor Patterns
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Solution Overview
Problem
Current lithographic techniques face challenges in forming ultra-fine patterns of several to several tens of nanometer size due to limitations in etch resistance and heat resistance of existing hardmask materials, which affect the precision and reliability of semiconductor manufacturing.
Innovation Solution
A monomer represented by Chemical Formula 1 is used to create a hardmask composition that, when heat-treated, forms a structure with improved etch resistance and heat resistance, enabling effective pattern formation through cross-linking and cyclization reactions, resulting in a hardmask layer with enhanced mechanical and thermal properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing hardmask materials are used, then the lithographic process can be performed, but the etch resistance and heat resistance are insufficient for ultra-fine pattern formation
Solution Approach 1:
The patent modifies the chemical composition parameters of hardmask materials by incorporating specific monomers with aromatic rings, heteroatoms, and functional groups. This changes the material's fundamental properties to achieve both high etch/heat resistance and pattern precision simultaneously
Solution Approach 2:
The patent creates composite hardmask compositions by combining multiple monomers with different functional groups (carboxyl, hydroxy, amino, etc.) and structural characteristics. This composite approach allows the material to exhibit both enhanced resistance properties and precise pattern formation capabilities
2Reliability
If heat treatment is performed at high temperature for long duration, then etch resistance improves, but manufacturing time and energy consumption increase
Solution Approach 1:
The patent incorporates monomers with pre-designed molecular structures containing aromatic rings and reactive functional groups that are prepared in advance. These pre-configured structures enable the hardmask to develop required resistance properties through cross-linking and cyclization reactions during heat treatment, reducing the required treatment time
Solution Approach 2:
The patent changes the chemical reactivity parameters of the hardmask material by selecting monomers with specific functional groups that undergo rapid cross-linking and cyclization reactions. This allows achieving high etch resistance at lower temperatures and shorter times compared to conventional materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition demonstrates excellent heat resistance, etch resistance, and gap-fill characteristics, allowing for precise and reliable pattern formation in semiconductor manufacturing, even at low temperatures and short heat treatment times.
Implementation Method 1
when heat-treated, forms a structure with improved etch resistance and heat resistance, enabling effective pattern formation through cross-linking and cyclization reactions
Implementation Method 2
when heat-treated, forms a structure with improved etch resistance and heat resistance, enabling effective pattern formation through cross-linking and cyclization reactions
Implementation Method 3
when heat-treated, forms a structure with improved etch resistance and heat resistance
Data Source
AI summary
A monomer for a hardmask composition, a hardmask composition, and a method of forming patterns, the monomer being represented by the following Chemical Formula 1: