Aromatic Polyaminoamide Additives for TSV Copper Plating
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Solution Overview
Problem
Current copper electroplating processes for semiconductor features with micrometer dimensions and high aspect ratios face challenges in achieving uniform deposits without defects like voids and seams, and in minimizing stress due to recrystallization during annealing, which is influenced by grain size and impurity content.
Innovation Solution
The use of aromatic polyaminoamides as additives in copper electroplating baths to promote rapid, defect-free deposition with increased grain size and reduced impurity content, ensuring voidless and seamless filling of features on both micrometer and nanometer scales.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electroplating additives are used, then copper deposition occurs, but voids and seams form in high aspect ratio features
Solution Approach 1:
The patent modifies the chemical parameters of the electroplating bath by introducing aromatic polyaminoamides with specific functional groups that change the deposition kinetics, enabling uniform filling of high aspect ratio features without voids or seams
Solution Approach 2:
The invention uses composite additive systems combining aromatic polyaminoamides with traditional suppressors, accelerators, and levelers to achieve synergistic effects that simultaneously prevent void formation and ensure uniform deposit morphology
2Productivity
If plating chemistry produces small copper grains, then rapid deposition occurs, but strong recrystallization stress forms during annealing
Solution Approach 1:
The aromatic polyaminoamide additives modify the crystal growth parameters during electroplating to produce larger initial grain sizes, which reduces the driving force for recrystallization during subsequent annealing processes while maintaining rapid deposition rates
3Quantity of substance
If conventional additives are used, then copper deposition occurs, but impurity content increases in the deposited layer
Solution Approach 1:
The aromatic polyaminoamides act as intermediary agents that facilitate copper ion reduction while preventing co-deposition of impurities, likely through selective complexation and controlled release mechanisms that maintain high deposit purity
Solution Approach 2:
The invention changes the electrochemical parameters of the plating bath through aromatic polyaminoamide additives, optimizing the reduction potential and kinetics to favor pure copper deposition over impurity incorporation
4Productivity
If rapid deposition is achieved, then productivity increases, but overplating occurs on substrate surfaces
Solution Approach 1:
The aromatic polyaminoamide additives create local differences in deposition behavior, promoting preferential growth inside features while suppressing overplating on flat substrate surfaces through localized complexation and controlled mass transport
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The aromatic polyaminoamides facilitate a copper electroplating process that results in a metal layer with reduced overplating, minimal voids, and decreased impurity content, leading to reduced stress on substrates and improved filling of complex feature geometries.
Implementation Method 1
Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
Data Source
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AI summary
A composition comprising a source of metal ions and at least one polyaminoamide, said polyaminoamide comprising amide and amine functional groups in the polymeric backbone and aromatic moieties attached to or located within said polymeric backbone.