Aromatic Polymer Hardmask for Lithography Etch Selectivity
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Solution Overview
Problem
In the microelectronics industry, existing lithographic processes face challenges in achieving high etch selectivity and resistance in hardmask layers, leading to insufficient pattern transfer to underlying materials, especially with thin resist layers and thick underlying materials, requiring additional etching steps and antireflective coatings.
Innovation Solution
Aromatic ring-containing polymers are used in an antireflective hardmask composition, combined with an organic solvent, crosslinking components, and an acid catalyst, to form a hardmask layer that minimizes reflectivity and provides high etch selectivity, allowing for efficient pattern transfer without the need for additional antireflective coatings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a hardmask layer is used to provide etch resistance, then etch selectivity is improved, but the layer becomes more complex and requires additional processing steps
Solution Approach 1:
The patent combines the hardmask layer and antireflective coating into a single integrated layer. The hardmask composition includes aromatic ring-containing polymers that provide both etch resistance and antireflective properties, eliminating the need for separate layers and reducing process complexity while maintaining both functions
Solution Approach 2:
The hardmask composition is designed to perform multiple functions simultaneously: it provides etch resistance, minimizes reflectivity, and enables pattern transfer. The aromatic ring-containing polymers serve dual purposes as both structural hardmask material and optical antireflective layer, reducing the number of processing steps
2Object-affected harmful factors
If additional antireflective coatings are applied, then reflectivity is reduced, but the number of etching steps and process complexity increases
Solution Approach 1:
The patent merges the antireflective function into the hardmask layer itself. The aromatic ring-containing polymers in the hardmask composition provide antireflective properties, eliminating the need for separate antireflective coating steps and reducing total process time
Solution Approach 2:
The hardmask composition performs both structural support and optical antireflective functions simultaneously. The aromatic ring-containing polymers provide both etch resistance and minimized reflectivity, reducing the number of sequential steps required
3Manufacturing precision
If the resist layer is made thinner to improve resolution, then patterning precision is improved, but etch resistance is reduced
Solution Approach 1:
The patent introduces an intermediate hardmask layer that mediates between the thin resist layer and the underlying material. This intermediate layer provides the necessary etch resistance while allowing the resist layer to remain thin for high-resolution patterning
Solution Approach 2:
The hardmask composition uses composite materials including aromatic ring-containing polymers and crosslinking components. This composite structure provides enhanced etch resistance and optical properties, enabling the use of thinner resist layers without compromising etch protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The aromatic ring-containing polymer composition achieves superior etch resistance and selectivity, enabling accurate pattern transfer to underlying layers with improved storage stability and optical properties, reducing the need for additional etching steps and antireflective coatings.
Implementation Method 1
an antireflective hardmask composition including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3
Implementation Method 2
combined with an organic solvent, crosslinking components, and an acid catalyst, to form a hardmask layer
Data Source
AI summary
An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.