Through-Via Adhesion Layers for Delamination-Resistant IC Packages
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving strong adhesion between conductive features and encapsulants in integrated circuit packages, leading to potential delamination during processing and reliability testing, which affects manufacturing yield and reliability.
Innovation Solution
The formation of adhesion layers using an adhesive compound that chemically bonds to both the conductive features and the encapsulant, specifically an aromatic compound with an amino group that reacts with metal surfaces but not semiconductor or dielectric surfaces, enhancing the adhesion strength between the conductive features and the encapsulant.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional direct bonding between conductive features and encapsulant is used, then manufacturing process is simple, but adhesion strength is insufficient leading to delamination
Solution Approach 1:
An adhesion layer comprising an aromatic compound is introduced as an intermediary between the conductive feature (metal) and the encapsulant. The aromatic compound forms chemical bonds with both the metal surface and the encapsulant material, creating a robust triangular bonding interface that significantly enhances adhesion strength and prevents delamination during processing and testing.
Solution Approach 2:
The bonding interface is transformed from a direct metal-encapsulant contact into a composite structure consisting of metal-adhesive compound-encapsulant layers. This composite approach allows each material to contribute its optimal properties: the metal provides electrical conductivity, the aromatic compound provides adhesion functionality, and the encapsulant provides protection and insulation.
2Reliability
If adhesion layers with adhesive compounds are formed, then adhesion strength and reliability are improved, but manufacturing complexity increases
Solution Approach 1:
The aromatic compound adhesion layer serves as a specialized intermediary that chemically bridges the metal conductive feature and the encapsulant. This mediator forms strong chemical bonds with both materials, ensuring reliable bonding that withstands thermal cycling, mechanical stress, and chemical exposure during device operation and testing.
Solution Approach 2:
The invention changes the chemical composition and bonding characteristics of the interface between conductive features and encapsulant. By introducing compounds with specific aromatic structures that have proven adhesion properties to both metals and encapsulant materials, the bonding parameters are optimized to achieve superior reliability without requiring complex process changes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the adhesion strength between conductive features and encapsulants, reducing delamination risks and enhancing the manufacturing yield and reliability of integrated circuit packages by providing a robust interface during subsequent processing and testing.
Implementation Method 1
an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound that forms a chemical bond to the material of the through via
Data Source
AI summary
In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.


