Array Substrate TFT Layout With Auxiliary Film for Opening Ratio
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Solution Overview
Problem
In the manufacturing of display panels, the formation of a metal protection film on TFTs is necessary to protect the oxide semiconductor film from hydrofluoric acid, but increasing the size of this film to account for manufacturing variations reduces the opening ratio.
Innovation Solution
An array substrate design that includes an auxiliary film made of non-metallic material, which overlaps the lower surfaces of the source and drain electrodes, allowing for protection of the semiconductor film without reducing the opening ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the metal protection film is increased in size to account for manufacturing variations, then the protection reliability is improved, but the opening ratio is reduced
Solution Approach 1:
The protection function is divided into two separate components: a metal protection film for chemical protection and an auxiliary film for dimensional coverage. This segmentation allows each film to be optimized independently - the metal protection film can be smaller while the auxiliary film provides the necessary coverage margin, thereby maintaining protection reliability without reducing the opening ratio
Solution Approach 2:
The auxiliary film acts as an intermediary layer between the semiconductor film and the metal protection film. It provides a physical barrier that compensates for manufacturing variations in contact hole positioning, allowing the metal protection film to be smaller while still ensuring adequate protection of the semiconductor film
Data Source
AI summary
An array substrate includes a first TFT that includes a first insulation film, a first semiconductor film in a layer upper than the first insulation film, a second insulation film in a layer upper than the first semiconductor film, a first gate electrode in a layer upper than the second insulation film and overlapping the first semiconductor film, a third insulation film in a layer upper than the first gate electrode, a first source electrode and a first drain electrode that are portions of a metal film in a layer upper than the third insulation film and connected to the first semiconductor film via first contact holes in the third insulation film, and an auxiliary film made of non-metal material and in a layer upper or lower than the first semiconductor film to overlap at least lower surfaces of the first source electrode and the first drain electrode.