Array Substrate Barrier Layer Prevents Fluorine Diffusion

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Solution Overview

Problem

In the production of flat display devices, fluorine atoms from the support layer can diffuse into the active layer of the vertical thin film transistor, affecting the electrical conductivity and reliability of the array substrate.

Innovation Solution

A barrier layer made of silicon oxide or silicon nitride is introduced between the support layer and the active layer to prevent fluorine atoms from entering the active layer, improving the reliability of the array substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a fluorine atom containing material is used for processing the support layer, then the support layer can be effectively formed, but fluorine atoms diffuse into the active layer affecting electrical conductivity and reliability

Engineering Contradiction:
Improvereliability of array substrateVSAvoidfluorine atom diffusion
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

An inert gas barrier layer is introduced between the support layer and the active layer to act as an intermediary that prevents fluorine atoms from diffusing into the active layer. The barrier layer is formed of an inert gas material that does not react with fluorine atoms, thereby blocking the harmful diffusion path while allowing both the support layer and active layer to maintain their respective functions.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The barrier layer is constructed using an inert gas material that creates an inert environment between the support layer and active layer. This inert atmosphere prevents chemical reactions and diffusion of fluorine atoms into the active layer, protecting the electrical conductivity and reliability of the array substrate while allowing the support layer to be processed with fluorine-containing materials.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Device complexity

If the support layer is directly adjacent to the active layer, then the device structure is simpler, but fluorine atoms can diffuse into the active layer reducing electrical conductivity

Engineering Contradiction:
Improvestructure complexityVSAvoidelectrical conductivity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

An inert gas barrier layer is introduced between the support layer and the active layer to act as an intermediary that prevents fluorine atoms from diffusing into the active layer. The barrier layer is formed of an inert gas material that does not react with fluorine atoms, thereby blocking the harmful diffusion path while allowing both the support layer and active layer to maintain their respective functions.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If no barrier layer is used, then the manufacturing process is simpler and faster, but fluorine atom diffusion degrades device performance

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidelectrical conductivity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

An inert gas barrier layer is introduced between the support layer and the active layer to act as an intermediary that prevents fluorine atoms from diffusing into the active layer. The barrier layer is formed of an inert gas material that does not react with fluorine atoms, thereby blocking the harmful diffusion path while allowing both the support layer and active layer to maintain their respective functions.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The barrier layer effectively isolates the support layer from the active layer, enhancing the electrical conductivity and reliability of the array substrate by preventing fluorine atom diffusion, thereby improving the overall performance of the display device.

Implementation Method 1

a barrier layer covering the drain electrode layer; an active layer formed on the barrier layer; the barrier layer isolating the support layer and the active layer

Methodology Applied
Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS10304959B2Array substrate, display device, and method of manufacturing the same
Publication Date: 2019.05.28 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
  • US10304959B2 patent drawing
  • US10304959B2 patent drawing

AI summary

The present invention discloses an array substrate, a display device, and a method of manufacturing the same. Wherein, the array substrate comprises a substrate; a source electrode layer formed on the substrate; a support layer formed on the source electrode layer; a drain electrode layer formed on the support layer; a barrier layer covering the drain electrode layer; an active layer formed on the barrier layer; the barrier layer isolating the support layer and the active layer. By the above-mentioned structure, the fluorine atoms in the support layer can be prevented from entering the active layer, thereby improving the reliability of the array substrate.