Array Substrate Barrier Layer for Thin-Film Transistor Stability

The patent segments the metal contact layer into different regions: source/drain contact regions and channel region contact regions, allowing different treatments for different functional areas. The source and drain contact regions are treated with plasma to reduce contact resistance, while the channel region contact region is protected or treated differently to maintain semiconducting characteristics and on-off characteristics.

Different regions of the active layer and metal contact layer receive different treatments to achieve locally optimized properties. The source/drain regions undergo plasma treatment for low contact resistance, while the channel region maintains its semiconducting properties through selective protection or different treatment conditions, creating local quality variations that resolve the contradiction.

The patent applies preliminary protective measures to the channel region before plasma bombardment, such as forming a protective layer or using selective masking, to prevent plasma damage that would cause carrier diffusion and loss of semiconducting characteristics. This preliminary protection allows the plasma treatment to proceed on source/drain regions without compromising the channel region's semiconducting properties.

The patent introduces an intermediary protective layer or uses a mediator treatment approach that allows plasma bombardment to benefit the source/drain regions while protecting the channel region. This intermediary mechanism enables selective treatment, preventing harmful carrier diffusion in the channel while achieving the desired resistance reduction in contact regions.