Array Substrate Bias Layout for Uniform Pressure Sensor Voltage
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Solution Overview
Problem
Semiconductor pressure sensors in touch screens receive different voltages when sharing a power supply signal line, leading to inconsistent pressure detection sensitivity due to varying resistance values along the signal lines.
Innovation Solution
The array substrate incorporates a bias voltage applying circuit connected to semiconductor pressure sensors via separate power supply signal lines, with a higher concentration of dopant ions closer to the bias voltage applying circuit to maintain consistent voltage across sensors, thereby adjusting resistance values and ensuring equal input voltages for improved sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If multiple semiconductor pressure sensors share a common voltage input wire to reduce the number of wires, then the device complexity is reduced, but the pressure detection sensitivity deteriorates due to voltage distribution differences along the wire
Solution Approach 1:
The patent applies local quality by varying the dopant ion concentration in different regions of the semiconductor pressure sensors based on their positions relative to the voltage input device. Sensors closer to the voltage input device have lower dopant ion concentration (higher resistance), while sensors farther away have higher dopant ion concentration (lower resistance). This local adjustment compensates for the voltage drop along the shared wire, ensuring all sensors receive appropriate input voltage for accurate pressure detection.
2Reliability
If the concentration of dopant ions is increased in sensors farther from the bias voltage applying circuit, then the voltage received by remote sensors is improved, but the manufacturing precision becomes more complex due to position-dependent doping requirements
Solution Approach 1:
The patent implements parameter changes by systematically varying the dopant ion concentration parameter across different sensor locations. The concentration is adjusted as a function of distance from the bias voltage applying circuit, creating a gradient distribution that compensates for electrical resistance effects in the signal lines. This controlled parameter variation ensures reliable voltage reception while maintaining manufacturability through a systematic doping strategy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures that semiconductor pressure sensors receive similar input voltages, enhancing pressure detection sensitivity and accuracy by minimizing the impact of resistance variations in the signal lines.
Implementation Method 1
A concentration of the dopant ions in the plurality of semiconductor pressure sensors is higher close to the bias voltage applying circuit than farther away from the bias voltage applying circuit, so that an electrical resistance value of the plurality of semiconductor pressure sensors is lower close to the bias voltage applying circuit than an electrical resistance value farther away from the bias voltage applying circuit
Data Source
AI summary
An array substrate, a display panel and a display device are disclosed. The array substrate includes a base substrate, and a bias voltage applying circuit and a plurality of semiconductor pressure sensors both disposed at a side of the base substrate. The bias voltage applying circuit is electrically connected to a first power supply signal inputting terminal and a second power supply signal inputting terminal of the semiconductor pressure sensor via a first power supply signal line and a second power supply signal line, respectively, to supply a bias voltage to the semiconductor pressure sensor. A concentration of the dopant ions is higher when the related semiconductor pressure sensor is closer to the bias voltage applying circuit, so that an electrical resistance value of said semiconductor pressure sensor is lower.