Array Substrate Inkjet Coating for TFT Channel Corrosion Protection
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Solution Overview
Problem
Conventional metal oxide semiconductor materials in thin film transistor devices are prone to corrosion and contamination, leading to abnormal characteristics after source and drain electrode metal wirings are formed.
Innovation Solution
An array substrate manufacturing method involving ink-jet printing of metal salt solutions and SiS2 powders in organic solvents to form an active layer and protective layer simultaneously, using Zn(NO3)2 or In(NO3)3 solutions for the active layer and benzene-alcohol mixtures for the protective layer, which are cured to form ZnO or InO-based active layers and SiO2 protective layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If metal oxide semiconductor material is used in thin film transistor devices, then electron mobility is improved and manufacturing process is simplified, but the semiconductor material becomes prone to corrosion and contamination
Solution Approach 1:
A protective layer is formed on the semiconductor layer before the source and drain electrode metal wirings are formed. This preliminary protective coating prevents corrosion and contamination of the metal oxide semiconductor material during subsequent processing steps, while maintaining the high electron mobility characteristics of the metal oxide material.
Solution Approach 2:
The protective layer acts as an intermediary barrier between the metal oxide semiconductor material and the source/drain electrode metal wirings. This intermediate layer prevents direct contact and chemical interaction between the semiconductor and metal components, eliminating the corrosion and contamination issues while preserving the electrical performance benefits of metal oxide semiconductors.
2Manufacturing precision
If separate processes are used to form active layer and protective layer, then layer quality is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The active layer and protective layer are formed in a single integrated inkjet printing process step. The inkjet system deposits both layers simultaneously or in immediate sequence, eliminating the need for separate printing, drying, and curing cycles for each layer. This merging of processes reduces manufacturing complexity and cost while maintaining the quality of both layers through precise inkjet deposition control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method prevents corrosion and contamination of the channel region of the active layer, saving one mask and reducing costs by forming the active and protective layers simultaneously.
Implementation Method 1
a solvent in the metal salt solution is volatilized to form a metal oxide semiconductor layer
Implementation Method 2
a solvent in the metal salt solution is volatilized
Implementation Method 3
the SiS2 powders in the second ink reacts with moisture in the metal salt solution to form SiO2 to form the protective layer
Data Source
AI summary
The present application provides an array substrate, a manufacturing method thereof, and a display panel thereof. A first ink is coated on an active region of an underlay substrate to form an active layer pattern, a second ink is coated on a channel region on the underlay substrate to form a protective layer pattern. Then the active layer pattern and the protective layer pattern is cured to form films, and to simultaneously form an active layer and a protective layer. The protective layer can protect the channel region of the active layer to mitigate an issue of the conventional corroded and contaminated metal oxide.